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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.41 no.8 = no.326, 2004년, pp.1 - 8
Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For nega...
D. J. DiMaria and E. Cartier, 'Mechanism for Strss-induced leakage currents in thin silicon dioxide films,' J. Appl. Phys, Vol. 78, No. 6, pp. 3883-3894, 1995
K. F. Schuegraf and C. Hu, 'Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation,' IEEE Trans. Electron Devices, Vol. 41, No. 5, pp. 761-766, 1994
E. Rosenbaum and L. F. Register, 'Mechanism of stress-induced leakage current in MOS capacitors,' IEEE Trans. Electron Devices, Vol. 44, pp. 317-323, 1997
M. Houssa, T. Nigam, P. W. Mertens and M. M. Heyns, 'Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown,' J. Appl. Phys, Vol. 84, No. 8, pp. 4351-4355
E. M. Vogel, D. W. Heh, J. B. Bernstein and J. S. Suehle, 'Impact of the trapping of anode hot holes on silicon dioxide breakdown,' IEEE Electron Device Lett., Vol. 23, pp. 667-669, 2002
E. Rosenbaum and J. Wu, 'Trap generation and breakdown processes in very thin gate oxides,' Microelectronics Reliability, vol. 41, pp. 625-632, 2001
H. Guan, M. F. Li, Y. He, B. J. Cho and Z. Dong, 'A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET's,' IEEE Trans. Electron Devices, vol. 47, pp. 1608-1616
S. I. Takagi and M. Takayanagi,' Carrier transport properties of thin gate oxide after soft and hard breakdown,' Microelectronic Engineering, vol. 59, pp. 5-15, 2001
T. Sakura, H. Utsunomiya, Y. Kamakua and K. Taniguchi, 'A detailed study of soft and pre-soft-breakdowns in small geometry MOS structures,' IEDM Tech. Dig., pp. 183-186, 1998
P.J. McWhorter and P.S. Winokur, 'Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors,' Appl. Phys. Lett., vol. 48, pp. 133-135, 1986
K. Hess, A. Haggag, W. McMahon, B. Fischer, K. Cheng, J. Lee and J. Lyding, 'Simulation of Si- $SiO_2$ defect generation in CMOS chips: From atomistic structure to chip failure rates,' IEMD Tech. Dig., pp. 93-96, 2000
J. H. Stathis, 'Percolation models for gate oxide breakdown,' J. Appl. Phys., vol. 86, pp. 5757-5766, 1999
J. W. Lyding, K. Hess, and I. C. Kizilyalli, 'Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing,' Appl. Phys. Lett., vol. 68, pp. 2526-2528, 1996
P. M. Lenahan and J. F. Conley Jr., 'What can electron paramagnetic resonance tell us about the Si- $SiO_2$ system?,' J. Vacuum Science and Technology B, vol. 16, pp. 2134-2154, 1998
H. Uchida and T. Ajioka, 'Electron trap center generation due to hole trapping in $SiO_2$ under Fowler-Nordheim tunneling stress,' Appl. Phys. Lett., vol. 51, pp. 433-435, 1987
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