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NTIS 바로가기Journal of semiconductor technology and science, v.7 no.2, 2007년, pp.82 - 87
Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
The electrical properties of metallic junction diodes and metallic source/drain (S/D) Schottky barrier metal-oxide-semiconductor field-effect transistor (SB-MOSFET) were simulated. By using the abrupt metallic junction at the S/D region, the short-channel effects in nano-scaled MOSFET devices can be...
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