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Journal of semiconductor technology and science, v.7 no.2, 2007년, pp.110 - 119
Kushwaha, Alok (Electronics and Communication Engineering Department, Institute of Technology and Management) , Pandey, Manoj K. (Electronics and Communication Engineering Department, Institute of Technology and Management) , Pandey, Sujata (Electronics and Communication Engineering Department, Institute of Technology and Management) , Gupta, Anil K. (Electronics and Communication Engineering Department, National Institute of Technology)
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A new two-dimensional analytical model for dual-material double-gate fully-depleted SOI MOSFET with Pearson-IV type Doping Distribution is presented. An investigation of electrical MOSFET parameters i.e. drain current, transconductance, channel resistance and device capacitance in DM DG FD SOI MOSFE...
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