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NTIS 바로가기ETRI journal, v.31 no.6, 2009년, pp.660 - 666
Cheong, Woo-Seok (Convergence Components & Materials Research Laboratory, ETRI) , Lee, Jeong-Min (Convergence Components & Materials Research Laboratory, ETRI) , Lee, Jong-Ho (School of Electronic and Electrical Engineering, Kyungpook National University) , KoPark, Sang-Hee (Convergence Components & Materials Research Laboratory, ETRI) , Yoon, Sung-Min (Convergence Components & Materials Research Laboratory, ETRI) , Byun, Chun-Won (Convergence Components & Materials Research Laboratory, ETRI) , Yang, Shin-Hyuk (Convergence Components & Materials Research Laboratory, ETRI) , Chung, Sung-Mook (Convergence Components & Materials Research Laboratory, ETRI) , Cho, Kyoung-Ik (Convergence Components & Materials Research Laboratory, ETRI) , Hwang, Chi-Sun (Convergence Components & Materials Research Laboratory, ETRI)
We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below
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