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NTIS 바로가기電子工學會論文誌. Journal of the Institute of Electronics Engineers of Korea. SD, 반도체, v.47 no.12 = no.402, 2010년, pp.8 - 16
전명운 (서울대학교 전기컴퓨터공학부) , 김경철 (서울대학교 전기컴퓨터공학부) , 신범주 (하이닉스) , 이정우 (서울대학교 전기컴퓨터공학부)
NAND multilevel cell (MLC) flash memory is widely issued because it can increase the capability of storage by storing two or more bits to a single cell. However if a number of levels in a cell increases, some physical features like cell to cell interference result cell voltage shift and it is known ...
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