[논문]Temperature-Adaptive Back-Bias Voltage Generator for an RCAT Pseudo SRAM

Son, Jong-Pil; Byun, Hyun-Geun; Jun, Young-Hyun; Kim, Ki-Nam; Kim, Soo-Won

doi:10.4218/etrij.10.0109.0366

[국내논문] Temperature-Adaptive Back-Bias Voltage Generator for an RCAT Pseudo SRAM 원문보기

ETRI journal, v.32 no.3, 2010년, pp.406 - 413

Son, Jong-Pil (Memory Division, Samsung Electronics Corporation) , Byun, Hyun-Geun (Department of Semiconductor, SSIT, Samsung Electronics Corporation) , Jun, Young-Hyun (Memory Division, Samsung Electronics Corporation) , Kim, Ki-Nam (Memory Division, Samsung Electronics Corporation) , Kim, Soo-Won (Department of Electronics Engineering, Korea University)

Abstract ▼ AI-Helper

In order to guarantee the proper operation of a recessed channel array transistor (RCAT) pseudo SRAM, the back-bias voltage must be changed in response to changes in temperature. Due to cell drivability and leakage current, the obtainable back-bias range also changes with temperature. This paper presents a pseudo SRAM for mobile applications with an adaptive back-bias voltage generator with a negative temperature dependency (NTD) using an NTD VBB detector. The proposed scheme is implemented using the Samsung 100 nm RCAT pseudo SRAM process technology. Experimental results show that the proposed VBB generator has a negative temperature dependency of -0.85 $mV/^{\circ}C$, and its static current consumption is found to be only 0.83 ${\mu}A$@2.0 V.

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제안 방법

This paper presents a pseudo SRAM for mobile applications with a simple temperature-adaptive VBB generator that guarantees the proper operation of the memory over the operating temperature range.
It is also required that the V_rout be changed to set the target VBB given from (4). The proposed scheme has a laser fusing method to tune the V_rout after the chip test.

이론/모형

In this paper, we used the long channel PMOSFET to give immunity from the short channel effect and process variations and Shockley’s MOSFET model is used for analysis instead of the alpha-power law model [12].

참고문헌 (13)

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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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