[논문]Fabrication and Challenges of Cu-to-Cu Wafer Bonding

Kang, Sung-Geun; Lee, Ji-Eun; Kim, Eun-Sol; Lim, Na-Eun; Kim, Soo-Hyung; Kim, Sung-Dong; Kim, Sarah Eun-Kyung

doi:10.6117/kmeps.2012.19.2.029

Fabrication and Challenges of Cu-to-Cu Wafer Bonding 원문보기

마이크로전자 및 패키징 학회지 = Journal of the Microelectronics and Packaging Society, v.19 no.2, 2012년, pp.29 - 33

Kang, Sung-Geun (Microsystem Packaging Center, Seoul Technopark) , Lee, Ji-Eun (Department of Mechanical System Design Engineering, Seoul National University of Science and Technology) , Kim, Eun-Sol (Department of Mechanical System Design Engineering, Seoul National University of Science and Technology) , Lim, Na-Eun (Department of Mechanical System Design Engineering, Seoul National University of Science and Technology) , Kim, Soo-Hyung (Microsystem Packaging Center, Seoul Technopark) , Kim, Sung-Dong (Department of Mechanical System Design Engineering, Seoul National University of Science and Technology) , Kim, Sarah Eun-Kyung (Graduate School of NID Fusion Technology, Seoul National University of Science and Technology)

Abstract ▼ AI-Helper

The demand for 3D wafer level integration has been increasing significantly. Although many technical challenges of wafer stacking are still remaining, wafer stacking is a key technology for 3D integration due to a high volume manufacturing, smaller package size, low cost, and no need for known good die. Among several new process techniques Cu-to-Cu wafer bonding is the key process to be optimized for the high density and high performance IC manufacturing. In this study two main challenges for Cu-to-Cu wafer bonding were evaluated: misalignment and bond quality of bonded wafers. It is demonstrated that the misalignment in a bonded wafer was mainly due to a physical movement of spacer removal step and the bond quality was significantly dependent on Cu bump dishing and oxide erosion by Cu CMP.

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문제 정의

To evaluate a bond quality the annealing after bonding was investigated in this study. As shown in Fig.

제안 방법

In this study the two main challenges for Cu-to-Cu wafer bonding are evaluated: misalignment and Cu bonding quality. Some report¹²⁾ stated that bond tool and wafer thinning process can introduce a misalignment of bonded wafers.
The accuracy of alignment can be dependent on both equipment (aligner and bonder) and process. In this study, glass-to-Si wafer pairs were prepared and inspected after a clamping step to verify any pre-bonding misalignment and after a bonding step to verify any post-bonding misalignment. Also, the misalignment with and without spacers were tested, because a spacer removal step is the only physical movement during a bonding process sequence.

성능/효과

after finishing all aligning steps) and after a bonding step is shown in Fig. 3. It is clearly shown that there was almost no misalignment during an aligning process sequence including inserting a spacer and loading aligned two wafers from an aligner to a bonder. But the misalignment after a bonding process sequence was markedly observed about 1 µm in the left side and about 6-7 µm in the right side of bonded wafer.
Secondly the effect of spacer removal in a bonding process was evaluated and the results are shown in Fig. 4. There was almost no misalignment after bonding without spacers, but the misalignment was clearly observed after bonding with spacers. It seemed that a physical movement of spacer removal from two aligned wafers was the main cause for a misalignment because a wafer has had a great chance to move when three spacers were removed.

참고문헌 (14)

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상세보기
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상세보기
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상세보기
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상세보기
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상세보기
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Fabrication and Challenges of Cu-to-Cu Wafer Bonding 원문보기

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