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NTIS 바로가기한국세라믹학회지 = Journal of the Korean Ceramic Society, v.49 no.4, 2012년, pp.328 - 332
Jang, Mi-Ran (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology (Icheon)) , Paek, Yeong-Kyeun (School of Materials Science and Engineering, Andong National University) , Lee, Sung-Min (Engineering Ceramic Center, Korea Institute of Ceramic Engineering and Technology (Icheon))
Etch rates of Si and high purity SiC have been compared for various fluorocarbon plasmas. The relative plasma resistance of SiC, which is defined as the etch rate ratio of Si to SiC, varied between 1.4 and 4.1, showing generally higher plasma resistance of SiC. High resolution X-ray photoelectron an...
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