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NTIS 바로가기IEIE Transactions on Smart Processing and Computing, v.5 no.1, 2016년, pp.10 - 16
Nguyen, H.V. (Hardware Design Group, Viettel R&D Institute) , Kim, Youngmin (Department of Computer Engineering, Kwangwoon University)
In this paper, a design for a fully digital voltage sensor using a 32-nm fin-type field-effect transistor (FinFET) is presented. A new characteristic of the double gate p-type FinFET (p-FinFET) is examined and proven appropriate for sensing voltage variations. On the basis of this characteristic, a ...
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