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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0905123 (2013-05-29) |
| 등록번호 | US-9104107 (2015-08-11) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 0 인용 특허 : 619 |
DUV lithography process that eliminates post exposure baking of a photoresist. Thick photoresist may be processed to obtain enhanced sidewall profiles for microelectronic devices.
1. A method of forming a pattern in a DUV lithography process, the method comprising: providing a photoresist on a substrate to form a coating;heating the coating prior to exposure;exposing a portion of the coating at a wavelength between 248 nm and 300 nm while irradiating the coating at a dosage f
1. A method of forming a pattern in a DUV lithography process, the method comprising: providing a photoresist on a substrate to form a coating;heating the coating prior to exposure;exposing a portion of the coating at a wavelength between 248 nm and 300 nm while irradiating the coating at a dosage from 160 mJ/cm2 to 200 mJ/cm2, inclusive; anddeveloping the coating to form a pattern, without performing a post exposure bake prior to developing the coating. 2. The method of claim 1, wherein the coating has a thickness of about 0.25 micrometers to about 5 micrometers after the coating is heated. 3. The method of claim 1, wherein the coating has a thickness of about 1 micrometers to about 3 micrometers after the coating is heated. 4. The method of claim 1, wherein the coating remaining after development comprises a structure having substantially straight sidewalls. 5. The method of claim 1, wherein the coating is exposed at a wavelength of 248 nm. 6. The method of claim 1, wherein the exposing a portion of the coating further comprises irradiating the coating with either a krypton fluoride laser or an argon fluoride laser. 7. A method of forming a pattern in a DUV lithography process, the method comprising: providing a photoresist on a substrate to form a coating;heating the coating prior to exposure;exposing a portion of the coating to an illumination dose from 160 mJ/cm2 to 200 mJ/cm2, inclusive; anddeveloping the coating to form a pattern, without performing a post exposure bake prior to developing the coating. 8. The method of claim 7, wherein the coating has a thickness of about 0.25 micrometers to about 5 micrometers after the coating is heated. 9. The method of claim 7, wherein the coating has a thickness of about 1 micrometers to about 3 micrometers after the coating is heated. 10. The method of claim 7, wherein the coating remaining after development comprises a structure having substantially straight sidewalls. 11. The method of claim 7, wherein the coating is exposed with either a krypton fluoride laser or an argon fluoride laser. 12. A method of forming a pattern in a DUV lithography process, the method comprising: providing a chemically-amplified photoresist on a substrate to form a coating;heating the coating prior to exposure;exposing a portion of the coating at a wavelength between 248 nm and 300 nm while irradiating the coating with an illumination dose from 160 mJ/cm2 to 200 mJ/cm2, inclusive; anddeveloping the coating to form a pattern, without performing a post exposure bake prior to developing the coating. 13. The method of claim 12, wherein the coating has a thickness of about 0.25 micrometers to about 5 micrometers after the coating is heated. 14. The method of claim 12, wherein the coating has a thickness of about 1 micrometers to about 3 micrometers after the coating is heated. 15. The method of claim 12, wherein the coating remaining after development comprises a structure having substantially straight sidewalls. 16. The method of claim 12, wherein the coating is exposed at a wavelength of 248 nm. 17. The method of claim 12, wherein the coating is exposed with a krypton fluoride laser or an argon fluoride laser. 18. The method of claim 12, wherein the chemically-amplified photoresist is catalyzed with an acid.
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