최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기한국전자통신학회 논문지 = The Journal of the Korea Institute of Electronic Communication Sciences, v.13 no.6, 2018년, pp.1213 - 1222
정호용 (전남대학교 의공학과) , 김대익 (전남대학교 전기전자통신컴퓨터공학부)
The energy band gaps and the bowing parameters of zincblende
* AI 자동 식별 결과로 적합하지 않은 문장이 있을 수 있으니, 이용에 유의하시기 바랍니다.
핵심어 | 질문 | 논문에서 추출한 답변 |
---|---|---|
가상 결정 근사법이란? | 일반적으로 본 연구의 기초가 되는 3원계 화합물 반도체의 에너지띠 구조를 계산할 때에는 pseudopotential을 성분비에 따라 평균치를 취하는 가상 결정 근사법(virtual crystal approximation, VCA)방법을 많이 사용하여 왔다. 그러나 이 방법은 non-local pseudopotential, 무질서효과(disorder effect) 등[2]을 고려하지 않음으로써 실험치를 크게 만족스럽게 설명 하지 못하였다. | |
가상 결정 근사법의 단점은? | 일반적으로 본 연구의 기초가 되는 3원계 화합물 반도체의 에너지띠 구조를 계산할 때에는 pseudopotential을 성분비에 따라 평균치를 취하는 가상 결정 근사법(virtual crystal approximation, VCA)방법을 많이 사용하여 왔다. 그러나 이 방법은 non-local pseudopotential, 무질서효과(disorder effect) 등[2]을 고려하지 않음으로써 실험치를 크게 만족스럽게 설명 하지 못하였다. | |
III-V-N족 질화물계 화합물 반도체는 어떻게 사용되는가? | III-V-N족 질화물계 화합물 반도체(nitride semiconductor)는 조성비를 조절함으로써 원자외선(deep-ultraviolet) 영역으로부터 근적외선(near infrared) 영역에 이르는 광대역 에너지 밴드갭(energy band gap)을 가지며, LED(light emitting diode), LD(laser diode) 등의 광전소자 및 전자소자 등에 사용되고 있다[7-9]. |
H. Chung and D. Kim, "The Calculation of the Energy Band Gaps of Zincblende InAs $InAs_{1-x}N_x$ on Temperature and Composition," J. of the Korea Institute of Electronic Communication Sciences, vol. 11, no. 12, 2016, pp. 1165-1174.
H. Chung and M. An, "Energy Band Structures of Graded Gap Superlattices and Quaternary Compound Semiconductors," Sae Mulli, vol. 32, no. 5, 1992, pp. 693-702.
G. Pozina, I. Ivanov, B. Monemar, J. Thordson, and T. G. Andersson, "Optical characterization of MBE-grown GaNAs," Material Sience & Engineer. B, vol. 50, issues 1-3, 1997, pp. 153-156.
L. Malikova, F. Pollak, and R. Bhat, "Composition and Temperature Dependence of the Direct Band Gap of $GaAs_{1-X}N_X(0{\leq}x{\leq}0.0232$ Using Contactless Electroreflectance," J. of Electronic Materials, vol. 27, no.5, 1998, pp. 484-487.
K. Uesugi, N. Morooka, and I. Suemune, "Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements," Appl. Phys. Lett., vol. 74, no. 9, 1999, pp. 1254-1256.
M. Beaudoin, I. Chan, D. Beaton, M. Elouneg-Jamroz, T. Tiedje, M. Whitwick, E.Young, J. Young, and N. Zangenberg, "Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy," J. Crystal Growth, vol. 311, no. 7, 2009, pp. 1662-1665.
Y. Kuo, B. Liou, M. Chen, S. Yen, and C. Lin, "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics," Opt. Commun., vol. 231, issue 1-6, 2004, pp. 395-402.
J. Kwon, H. Kim, K. Park, Y. Kim, and G. Hoang, "Thermal Characteristics of Designed Heat Sink for 13.5W COB LED Down Light," J. of the Korea Institute of Electronic Communication Sciences, vol. 9, no. 5, 2014, pp. 561-566.
B. Yoon, J. Song, J. Park, and H. Kwon, "Development of 1.2kW LED Light with Water-Air Circulation," J. of the Korea Institute of Electronic Communication Sciences, vol. 10, no. 5, 2015, pp. 615-622.
B. Liou and C. Liu, "Electronic and structural properties of zincblende $Al_X\;In_{1-x}N$ ," Optics Commun., vol. 274, no. 2, 2007, pp. 361-365.
R. Senger and K. Bajaj, "Photoluminescence excitonic linewidth in GaAsN alloys," J. of Appl. Phys., vol. 94, no. 12, 2003, pp. 7505-7508.
U. Tisch, E. Finkman, and J. Salzman, "The anomalous bandgap bowing in GaAsN," Appl. Phys. Lett., vol. 81, no. 3, 2002, pp. 463-465.
A. Gueddim, R. Zerdoum, and N. Bouarissa, "Dependence of electronic properties on nitrogen concentration in $GaAs_{1-X}N_X$ dilute alloys," J. of Physics and Chemistry of Solids, vol. 67, no. 8, 2006, pp. 1618-1622.
C. Zhao, N. Li, T. Wei, and C. Tang, "Temperature and Composition Dependence of $GaN_x As_{1-X}(0 before and after Annealing," Chin. Phys. Lett., vol. 28, no. 12, 2011, pp. 127801-1-4.
R. Kudrawiec, G. Sek, J. Misiewicz, L. Li, and J. Harmand, "Experimental investigation of the $C_{MN}$ matrix element in the band anticrossing model for GaAsN and GaInAsN layers," Solid State Commun., vol. 129, issue 6, 2004, pp. 353-357.
H. Chung, "Energy Band Gaps and Bowing Parameters of Zincblende $GaAs_{1-X}N_X$ ," Sae Mulli, vol. 64, no. 9, 2014, pp. 868-876.
J. Ibanez, R. Oliva, M. De la Mare, M. Schmidbauer, S. Hernandez, P. Pellegrino, D. Scurr, R. Cusco, L. Artus, M. Shafi, R. Mari, M. Henini, Q. Zhuang, A. Godenir, and A. Krier, "Structural and optical properties of dilute InAsN grown by molecular beam epitaxy," J. of Appl. Phys., vol. 108, issue 10, 2010, pp. 103504-1-8.
R. Kudrawiec, J. Misiewicz, Q. Zhuang, A. Godenir, and A. Krier, "Photoreflectance study of the energy gap and spin-orbit splitting in InNAs alloys," Appl. Phys. Lett., vol. 94, no. 15, 2009, pp. 151902-1-3.
C. Zhao, T. Wei, N. Li, S. Wang, and K. Lu, "The evolution of the band gap energy of the P-rich $GaN_x P_{1-x}(0{\leq}x{\leq}0.05)$ on composition and temperature," Physica B: Physics of Condensed Matter., vol. 427, Oct. 2013, pp. 58-61.
C. Zhao, T. Wei, X. Sun, S. Wang, and K. Lu, "The factors contributing to the band gap bowing of the dilute nitride GaNP alloy," Appl. Phys. A, vol. 117, issue 3, 2014, pp. 1447-1450.
H. Chung and D. Kim, "The Calculation of the Energy Band Gaps of Zincblende $GaP_{1-x}N_x$ ," J. of the Korea Institute of Electronic Communication Sciences, vol. 12, no. 5, 2017, pp. 783-790.
Y. Varshni, "Temperature dependence of the energy gap in semiconductors," Physica, vol. 34, Issue 1, 1967, pp. 149-154.
I. Vurgaftman, J. Meyer, and L. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," J. of Appl. Phys., vol. 89, no. 11, 2001, pp. 5815-5875.
A. Gueddim, R. Zerdoum, and N .Bouarissa, "Alloy composition and optoelectronic properties of dilute $GaSb_{1-x}N_x$ by pseudo-potential calculations," Physica B, vol. 389, no. 2, 2007, pp. 335-342.
N. Bouarissa,, S. Siddiqui, M. Boucenna, and M. Khan, "Band structure and optical constants of $GaAs_{1-X}N_X$ ," Optik, vol. 131, Feb. 2017, pp. 317-322.
N. E. H Fares and N. Bouarissa, "Band Structure, Charge Distribution and Optical Properties of $AlP_xSb_{1-x}$ Ternary Semiconductor Alloys," Materials Research, vol. 21, no. 4, 2018, pp. 1-8.
M. Boucenna and N. Bouarissa, "Refractive index and dielectric constants of Ga_xIn_{1-x}P: Disorder effect," Optik, vol. 125, issue 22, 2014, pp. 6611-6615.
W. Kara Mohamed, F. Mezrag, M. Boucenna, and N. Bouarissa, "Electronic structure and related properties for quasi-binary $(GaP)_{1-x}(ZnSe)_x$ crystals," J. of Structural Chem., vol. 54, no. 6, 2013, pp. 1004-1011.
N. Ravindra, P. Ganapathy, and J. Choi, "Energy gap-refractive index relations in semiconductors-an overview," Infrared Phys. & Technol., vol. 50, issue 1, 2007, pp. 21-29.
N. Ravindra and V. Srivastava, "Variation of refractive index with energy gap in semiconductors," Infrared Phys., vol. 19, issue 5, 1979, pp. 603-604.
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
Free Access. 출판사/학술단체 등이 허락한 무료 공개 사이트를 통해 자유로운 이용이 가능한 논문
※ AI-Helper는 부적절한 답변을 할 수 있습니다.