Jeong, Yujeong
(Department of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul National University)
,
Hong, Seongbin
(Department of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul National University)
,
Jung, Gyuweon
(Department of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul National University)
,
Jang, Dongkyu
(Department of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul National University)
,
Shin, Wonjun
(Department of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul National University)
,
Park, Jinwoo
(Department of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul National University)
,
Han, Seung-Ik
(Department of Energy Systems Research, Ajou University)
,
Seo, Hyungtak
(Department of Energy Systems Research, Ajou University)
,
Lee, Jong-Ho
(Department of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul National University)
This study investigates the nitrogen dioxide (NO2) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO3) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The ...
This study investigates the nitrogen dioxide (NO2) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO3) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO3 sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)-type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 ㎛ by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO2 concentrations and operating temperatures. The response of the gas sensor increases as the NO2 concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 ㎛. The sputtered WO3 film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO2 gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO3 film increases.
This study investigates the nitrogen dioxide (NO2) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO3) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO3 sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)-type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 ㎛ by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO2 concentrations and operating temperatures. The response of the gas sensor increases as the NO2 concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 ㎛. The sputtered WO3 film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO2 gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO3 film increases.
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문제 정의
sensing layer, resistive gas sensor platforms have mainly been used. These studies confirm the performance of resistor-type gas sensor with the WO3 sensing layer deposited by various deposition methods[10-12]. In this study, we investigate the performance of an FET type gas sensor with a tungsten trioxide (WO3) sensing layer.
These studies confirm the performance of resistor-type gas sensor with the WO3 sensing layer deposited by various deposition methods[10-12]. In this study, we investigate the performance of an FET type gas sensor with a tungsten trioxide (WO3) sensing layer. WO3is an n-type metal oxide and sensitive to nitrogen dioxide (NO2)gas.
The response increases from 24% to 138% as the thickness of the sensing layer increases from 100nm to 1 μm. This study provides information on the operating temperature and, process conditions of the sensing material in an FET-type gas sensor with WO3 sensing material including the porous layer.
제안 방법
In this study, we investigated the NO2 gas sensing characteristics of a Si MOSFET gas sensor with the WO3 sensing layer. The gas sensor used in this study consists of a horizontal FGinterdigitated with CG.
대상 데이터
sensing layer. The gas sensor used in this study consists of a horizontal FGinterdigitated with CG. The WO3 sensing layer of the gas sensor is deposited on the interdigitated FG-CG by the RF magnetron sputtering method.
이론/모형
The gas sensor used in this study consists of a horizontal FGinterdigitated with CG. The WO3 sensing layer of the gas sensor is deposited on the interdigitated FG-CG by the RF magnetron sputtering method. The thickness of the sensing layer ranges between 100 nm and 1 μm.
The WO3 film is deposited using an RF magnetron sputtering method at 20℃, using radio frequency (RF) magnetron sputtering method. The RF power, working pressure, and rate of flow of argon (Ar) gas are 150 W, 10 mTorr, and 30 sccm, respectively.
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