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NTIS 바로가기한국결정성장학회지 = Journal of the Korean crystal growth and crystal technology, v.31 no.4, 2021년, pp.149 - 153
김소윤 (한국해양대학교 전자소재공학과) , 이정복 (한국해양대학교 전자소재공학과) , 안형수 (한국해양대학교 전자소재공학과) , 김경화 (한국해양대학교 전자소재공학과) , 양민 (한국해양대학교 전자소재공학과)
ε-Ga2O3 thin films were grown on 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD) and crystalline quality were evaluated depend on growth conditions. It was found that the best conditions of the ε-Ga2O3 were grown at a growth temperature of 665℃ and an oxygen...
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