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NTIS 바로가기전자통신동향분석 = Electronics and telecommunications trends, v.36 no.3, 2021년, pp.34 - 40
김현탁 (반도체소부장기술센터) , 노태문 (반도체소부장기술센터)
For developing a switching device of a new concept that cannot be implemented with a semiconductor device, we introduce the Mott insulator-metal transition (IMT) phenomenon occurring out of the semiconductor regime, such as the temperature-driven IMT, the electric-field or voltage-driven IMT, the ne...
N.F. Mott, "Metal-Insulator Transitions," 2nd, CRC Press, London, UK, 1990, pp. 1-2.
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H.T. Kim, "Negative-differential-resistance-switching Si-transistor operated by power pulse and identity of Zener breakdown," Appl. Phys. lett., vol. 103, 2013, 173501.
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