![Fig. 3. Overview of conventional approaches for area-selective ALD. (a1) Selective precursor adsorption and (a2) selective co-reactant adsorption are illustrated. (b) Alternatively, the surface is selectively functionalized prior to the deposition in order to locally deactivate the ALD growth. Reprinted with permission [12]. Copyright 2019, American chemical society.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n6/PMGHBJ_2022_v55n6_328_f0004.png "Fig. 3. Overview of conventional approaches for area-selective ALD. (a1) Selective precursor adsorption and (a2) selective co-reactant adsorption are illustrated. (b) Alternatively, the surface is selectively functionalized prior to the deposition in order to locally deactivate the ALD growth. Reprinted with permission [12]. Copyright 2019, American chemical society.")
![Fig. 4. The schematic outline of the procedure to fabricate patterned HfO<sub>2</sub> thin films using ODTS as inhibitor by AS-ALD. Reprinted with permission [15]. Copyright 2005, American Institute of Physics.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n6/PMGHBJ_2022_v55n6_328_f0005.png "Fig. 4. The schematic outline of the procedure to fabricate patterned HfO<sub>2</sub> thin films using ODTS as inhibitor by AS-ALD. Reprinted with permission [15]. Copyright 2005, American Institute of Physics.")
![Fig. 5. (a) Conventional area-selective ALD in which the substrate is planar and contains patterns of self-assembled monolayers. With increasing number if deposition cycles, sideways film growth also occurs originating from adsorption if ALD reactants on the previously deposited ALD film. (b) Blocking the lateral ALD growth independent of deposited film thickness by combining surface modification and topographical features. Reprinted with permission [22]. Copyright 2008, American Chemical Society.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n6/PMGHBJ_2022_v55n6_328_f0007.png "Fig. 5. (a) Conventional area-selective ALD in which the substrate is planar and contains patterns of self-assembled monolayers. With increasing number if deposition cycles, sideways film growth also occurs originating from adsorption if ALD reactants on the previously deposited ALD film. (b) Blocking the lateral ALD growth independent of deposited film thickness by combining surface modification and topographical features. Reprinted with permission [22]. Copyright 2008, American Chemical Society.")
![Fig. 6. Schematic illustration of surface reactions during the pulse of (a) aminosilane precursor and (b) O<sub>3</sub> oxidant on surfaces with -NH<sub>2</sub> versus -OH functional groups, respectively. (c) Representative reaction energy diagram of adsorption of aminosilane precursors on -OH versus -NH<sub>2</sub> surfaces. Values calculated for the DIPAS precursor are shown as an example. (d) Adsorption selectivity analysis of mono(dialkylamino)silanes with respect to the ligand alkyl moiety: methyl (M), ethyl (E), propyl (P), isopropyl (IP), butyl (B), isobutyl (IB), pentyl (PE), and isopentyl (IPE). Reprinted with permission [34]. Copyright 2021, Wiley.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n6/PMGHBJ_2022_v55n6_328_f0006.png "Fig. 6. Schematic illustration of surface reactions during the pulse of (a) aminosilane precursor and (b) O<sub>3</sub> oxidant on surfaces with -NH<sub>2</sub> versus -OH functional groups, respectively. (c) Representative reaction energy diagram of adsorption of aminosilane precursors on -OH versus -NH<sub>2</sub> surfaces. Values calculated for the DIPAS precursor are shown as an example. (d) Adsorption selectivity analysis of mono(dialkylamino)silanes with respect to the ligand alkyl moiety: methyl (M), ethyl (E), propyl (P), isopropyl (IP), butyl (B), isobutyl (IB), pentyl (PE), and isopentyl (IPE). Reprinted with permission [34]. Copyright 2021, Wiley.")
![Fig. 7. (a) 1) Pattering H-treminated surface using O<sub>2</sub> μ-plasma 2) Schematics of the AS-ALD process of In<sub>2</sub>O<sub>3</sub>:H on activated H-terminated silicon materials. (b) Film thickness measured by in situ SE as a function of the In<sub>2</sub>O<sub>3</sub>:H ALD cycles on SiO<sub>2</sub> (open triangles) and on a-Si:H (open circles). Ex situ SE measurement were taken only for 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivity of the process appears to degrade. Reprinted with permission [26]. Copyright 2017, American chemical society.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n6/PMGHBJ_2022_v55n6_328_f0008.png "Fig. 7. (a) 1) Pattering H-treminated surface using O<sub>2</sub> μ-plasma 2) Schematics of the AS-ALD process of In<sub>2</sub>O<sub>3</sub>:H on activated H-terminated silicon materials. (b) Film thickness measured by in situ SE as a function of the In<sub>2</sub>O<sub>3</sub>:H ALD cycles on SiO<sub>2</sub> (open triangles) and on a-Si:H (open circles). Ex situ SE measurement were taken only for 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivity of the process appears to degrade. Reprinted with permission [26]. Copyright 2017, American chemical society.")
![Fig. 8. (a) Real-time SE data for 100 cycle Cu ALD growth on Pd, Si3N4, and SiO<sub>2</sub> at 190 ℃. Reprinted with permission [37]. Copyright 2014, American Vacuum society. (b) Schematic illustration of the area-selective ALD of Fe<sub>2</sub>O<sub>3</sub> using O<sub>2</sub> gas as co-reactant. X-ray photoelectron spectroscopy (XPS) scans showing the Fe<sub>2</sub>p region after 300 ALD cycles of Fe<sub>2</sub>O<sub>3</sub> on Pt, Au, SiO<sub>2</sub>, and Al<sub>2</sub>O<sub>3</sub> substrates. A clear Fe<sub>2</sub>p signal is observed on Pt, but no Fe above the detection limit is detected on the catalytically inactive substrates. Reprinted with permission [41]. Copyright 2017, American chemical society.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n6/PMGHBJ_2022_v55n6_328_f0009.png "Fig. 8. (a) Real-time SE data for 100 cycle Cu ALD growth on Pd, Si3N4, and SiO<sub>2</sub> at 190 ℃. Reprinted with permission [37]. Copyright 2014, American Vacuum society. (b) Schematic illustration of the area-selective ALD of Fe<sub>2</sub>O<sub>3</sub> using O<sub>2</sub> gas as co-reactant. X-ray photoelectron spectroscopy (XPS) scans showing the Fe<sub>2</sub>p region after 300 ALD cycles of Fe<sub>2</sub>O<sub>3</sub> on Pt, Au, SiO<sub>2</sub>, and Al<sub>2</sub>O<sub>3</sub> substrates. A clear Fe<sub>2</sub>p signal is observed on Pt, but no Fe above the detection limit is detected on the catalytically inactive substrates. Reprinted with permission [41]. Copyright 2017, American chemical society.")
![Fig. 9. (a1) Schematic illustration of an ideal area-selective ALD process using ABC-type ALD cycles with inhibitor molecules. (a2) Nucleation curves for ABC-type ALD of SiO2 on different starting surfaces. Reprinted with permission [47]. Copyright 2017 American Chemical Society. (b1) Ru film thickness as a function of ALD cycles for growth on SiO<sub>2</sub> and Pt with an intermittent etch cycle after every 100 ALD cycles. (Inset: Thickness as a function of ALD cycles for deposition on SiO<sub>2</sub> and Pt without etch cycles) (b2) Top-view SEM images after 400 ALD cycles on SiO<sub>2</sub> without etch cycles, or with an etch cycle after every 100 ALD cycles. Reprinted with permission [49]. Copyright 2019, American chemical society.](http://ocean.kisti.re.kr/downfile/bibText/kise/PMGHBJ/2022/v55n6/PMGHBJ_2022_v55n6_328_f0010.png "Fig. 9. (a1) Schematic illustration of an ideal area-selective ALD process using ABC-type ALD cycles with inhibitor molecules. (a2) Nucleation curves for ABC-type ALD of SiO2 on different starting surfaces. Reprinted with permission [47]. Copyright 2017 American Chemical Society. (b1) Ru film thickness as a function of ALD cycles for growth on SiO<sub>2</sub> and Pt with an intermittent etch cycle after every 100 ALD cycles. (Inset: Thickness as a function of ALD cycles for deposition on SiO<sub>2</sub> and Pt without etch cycles) (b2) Top-view SEM images after 400 ALD cycles on SiO<sub>2</sub> without etch cycles, or with an etch cycle after every 100 ALD cycles. Reprinted with permission [49]. Copyright 2019, American chemical society.")
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표면 반응 제어를 통한 영역 선택적 원자층 증착법 연구 동향
Area selective atomic layer deposition via surface reaction engineering: a review
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한국표면공학회지 = Journal of the Korean institute of surface engineering, v.55 no.6, 2022년, pp.328 - 341
고은총 (서울과학기술대학교 신소재공학과) , 안지상 (서울과학기술대학교 신소재공학과) , 한정환 (서울과학기술대학교 신소재공학과)
Abstract
AI-Helper
Area selective atomic layer deposition (AS-ALD) is a bottom-up nanopattern fabrication method that can grow the ALD films only on the desired substrate areas without using photolithography and etching processes. Particularly, AS-ALD has attracted great attention in the semiconductor manufacturing pr...
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표/그림 (9)
참고문헌 (50)
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