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NTIS 바로가기전기전자학회논문지 = Journal of IKEEE, v.26 no.1, 2022년, pp.50 - 55
이건희 (Dept. of Electronic materials Engineering, Kwangwoon University) , 변동욱 (Dept. of Electronic materials Engineering, Kwangwoon University) , 신명철 (Dept. of Electronic materials Engineering, Kwangwoon University) , 구상모 (Dept. of Electronic materials Engineering, Kwangwoon University)
SiC is a power semiconductor with a wide bandgap, high insulation failure strength, and thermal conductivity, but many deep-level defects. Defects that appear in SiC can be divided into two categories, defects that appear in physical properties and interface traps that appear at interfaces. In this ...
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