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NTIS 바로가기한국정보전자통신기술학회논문지 = Journal of Korea institute of information, electronics, and communication technology, v.15 no.2, 2022년, pp.144 - 151
김영희 (Department of Electronic Engineering, Changwon National University) , 김홍주 (Department of Electronic Engineering, Changwon National University) , 하판봉 (Department of Electronic Engineering, Changwon National University)
In this paper, a 1.5V 256kb eFlash memory IP with low area DC-DC converter is designed for battery application. Therefore, in this paper, 5V NMOS precharging transistor is used instead of cross-coupled 5V NMOS transistor, which is a circuit that precharges the voltage of the pumping node to VIN volt...
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