[논문]저온 Cu 하이브리드 본딩을 위한 SiCN의 본딩 특성 리뷰

김연주; 박상우; 정민성; 김지훈; 박종경

doi:10.6117/kmeps.2023.30.4.008

저온 Cu 하이브리드 본딩을 위한 SiCN의 본딩 특성 리뷰
A Review on the Bonding Characteristics of SiCN for Low-temperature Cu Hybrid Bonding 원문보기

마이크로전자 및 패키징 학회지 = Journal of the Microelectronics and Packaging Society, v.30 no.4, 2023년, pp.8 - 16

김연주 (서울과학기술대학교 지능형반도체공학과) , 박상우 (서울과학기술대학교 지능형반도체공학과) , 정민성 (서울과학기술대학교 지능형반도체공학과) , 김지훈 (서울과학기술대학교 지능형반도체공학과) , 박종경 (서울과학기술대학교 지능형반도체공학과)

초록
AI-Helper

디바이스 소형화의 한계에 다다르면서, 이를 극복할 수 있는 방안으로 차세대 패키징 기술의 중요성이 부각되고 있다. 병목 현상을 해결하기 위해 2.5D 및 3D 인터커넥트 피치의 필요성이 커지고 있는데, 이는 신호 지연을 최소화 할 수 있도록 크기가 작고, 전력 소모가 적으며, 많은 I/O를 가져야 하는 등의 요구 사항을 충족해야 한다. 기존 솔더 범프의 경우 미세화 한계와 고온 공정에서 녹는 등의 신뢰성 문제가 있어, 하이브리드 본딩 기술이 대안책으로 주목받고 있으며 최근 Cu/SiO₂ 구조의 문제점을 개선하고자 SiCN에 대한 연구 또한 활발히 진행되고 있다. 해당 논문에서는 Cu/SiO₂ 구조 대비 Cu/SiCN이 가지는 이점을 전구체, 증착 온도 및 기판 온도, 증착 방식, 그리고 사용 가스 등 다양한 증착 조건에 따른 SiCN 필름의 특성 변화 관점에서 소개한다. 또한, SiCN-SiCN 본딩의 핵심 메커니즘인 Dangling bond와 OH 그룹의 작용, 그리고 플라즈마 표면 처리 효과에 대해 설명함으로써 SiO₂와의 차이점에 대해 기술한다. 이를 통해, 궁극적으로 Cu/SiCN 하이브리드 본딩 구조 적용 시 얻을 수 있는 이점에 대해 제시하고자 한다.

Abstract ▼ AI-Helper

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO2 structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO2 structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO2. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

주제어

표/그림 (14)

그림 Fig. 1. Schematic of the ideal bonding mechanism of the Cu/SiO₂ hybrid system. (a) Sides with Cu bumps in SiO₂ via. The height of the Cu bump is slightly lower than the surrounding SiO₂ layer. (b) Alignment and bonding of SiO₂ to SiO₂ at room temperature. (c) Heating to close the dishing gap and induce pressure in the Cu bump. The pressure was created due to thelarge CTE of the Cu. No external pressure is needed at the third stage.²⁾
그림 Fig. 3. The measured W2W bonding energy of SiCN-SiCN wafers sized at 300mm. It can be observed that the energy significantly increases after annealing process at 250°C.¹⁴⁾
그림 Fig. 2. (a) A new structure designed for Direct Hybrid Bonding. The protruding Top Cu pad aligns with the larger Bottom Cu pad, resulting in compensation for alignment errors and achieving improved accuracy for Direct Hybrid Bonding.¹⁴⁾ (b) TEM observation at the Cu/SiCN to Cu/SiCN hybrid bonding interface.¹²⁾
표 Table 1. ERD Analysis Results for SiO2 and SiCN Films¹⁸⁾
표 Table 2. Properties of SiCN Film after Deposition and Densification¹⁸⁾
표 Table 3. The thickness and roughness of the SiCN film layers measured after deposition and CMP process¹⁸⁾
그림 Fig. 4. IR spectra of SiCN films deposited at (a) room temperature, (b) 400°C, (c) 700°C, (d) 1000°C, (e) 1200°C.²³⁾
그림 Fig. 5. Results of TEM and EELS analysis for the SiCN-SiCN interface. It consists of a SiCO, N-depleted region (b) with a thickness of approximately 4 nm and two adjacent mixedcomposition regions (a) and (c), each with a thickness of a few nm.¹⁴⁾
그림 Fig. 6. STEM-EELS analysis for studying the evolution of chemical bond properties at the SiCN-SiCN bonding interface.¹⁴⁾
표 Table 4. Chemical composition and density of SiCN films²²⁾
그림 Fig. 7. Dangling bond densities of SiCN and SiO2 before / after bonding under various annealing conditions.³³⁾
그림 Fig. 8. The schematic drawings of model of void formation mechanism for SiO2 and SiCN.³⁷⁾
그림 Fig. 9. SiCxNy film SAM images (a) Room temperature bonding without plasma treatment (b) Results after 250°C, 2 hr annealing (interface bubble).⁷⁾
그림 Fig. 10. The initial bonding energy of SiCN film according to the plasma type and the final bonding energy after annealing.³⁹⁾

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