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NTIS 바로가기Micro and nano systems letters, v.8 no.1, 2020년, pp.14 -
Park, Jin Soo , Kang, Dong-Hyun , Kwak, Seung Min , Kim, Tae Song , Park, Jung Ho , Kim, Tae Geun , Baek, Seung-Hyub , Lee, Byung Chul
AbstractDeep reactive-ion etching (DRIE) is commonly used for high aspect ratio silicon micromachining. However, scalloping, which is the result of the alternating Bosch process of DRIE, can cause many problems in the subsequent process and degrade device performance. In this work, we propose a simp...
J Appl Phys B Wu 108 9 2010 Wu B, Kumar A, Pamarthy S (2010) High aspect ratio silicon etch: a review. J Appl Phys 108:9
Laermer F, Schilp A (1996) Method of anisotropically etching silicon. US Patent 5,501,893 26 Mar 1996
IEEE Electron Dev Lett LF Voss 34 10 1226 2013 10.1109/LED.2013.2278374 Voss LF, Shao A, Coway AM (2013) Smooth Bosch etch for improved Si diodes. IEEE Electron Dev Lett 34(10):1226-1228
J Vac Sci Technol B WH Juan 14 4080 1998 10.1116/1.588595 Juan WH, Pang SW (1998) Controlling sidewall smoothness for micromachined Si mirrors and lenses. J Vac Sci Technol B 14:4080-4084
Phys Rev Lett F Morichetti 104 033902 2010 10.1103/PhysRevLett.104.033902 Morichetti F, Canciamilla A, Ferrari C, Torregiani M, Melloni A, Martinelli M (2010) Roughness induced backscattering in optical silicon waveguides. Phys Rev Lett 104:033902
Opt Express Y Shoji 18 9071 2010 10.1364/OE.18.009071 Shoji Y, Kintaka K, Suda S, Kawashima H, Hasama T, Ishikawa H (2010) Low-crosstalk 2 × 2 thermo-optic switch with silicon wire waveguides. Opt Express 18:9071-9075
J Microelectromech Syst KS Chen 11 3 264 2002 10.1109/JMEMS.2002.1007405 Chen KS, Ayon AA, Zhang X, Spearing SM (2002) Effect of process parameters on the surface morphology and mechanical performance of silicon structures after deep reactive ion etching (DRIE). J Microelectromech Syst 11(3):264-275
Mat Sci Semicond Process J Fu 83 186 2018 10.1016/j.mssp.2018.04.033 Fu J, Li J, Yu J, Liu R, Li J, Wang W, Wang W, Chen D (2018) Improving sidewall roughness by combined RIE-Bosch process. Mat Sci Semicond Process 83:186-191
J Micromech Microeng IH Song 17 1593 2007 10.1088/0960-1317/17/8/023 Song IH, Peter YA, Meunier M (2007) Smoothing dry-etched microstructure sidewalls using focused ion beam milling for optical applications. J Micromech Microeng 17:1593
Mat Sci Semicond Proces ZAS Mohammed 63 83 2017 10.1016/j.mssp.2017.02.006 Mohammed ZAS, Olimpo MAS, Poenar DP, Aditya S (2017) Smoothening of scalloped DRIE trench walls. Mat Sci Semicond Proces 63:83-89
J Electrochem Soc R Legtenberg 142 6 2020 1995 10.1149/1.2044234 Legtenberg R, Jansen HV, de Boer M, Elwenspoek M (1995) Anisotropic reactive ion etching of silicon using SF6/O2/CHF3 gas mixtures. J Electrochem Soc 142(6):2020-2028
J Electrochem Soc Y Tzeng 134 9 2304 1987 10.1149/1.2100875 Tzeng Y, Lin TH (1987) Dry etching of silicon materials in SF6 based plasmas. J Electrochem Soc 134(9):2304-2309
J Electrochem Soc KP Larsen 153 12 1051 2006 10.1149/1.2357723 Larsen KP, Petersen DH, Hansen O (2006) Study of the roughness in a photoresist masked, isotropic, SF6-based ICP silicon etch. J Electrochem Soc 153(12):1051-1058
J Micromech Microeng H Jansen 6 1 14 1996 10.1088/0960-1317/6/1/002 Jansen H, Gardeniers H, de Boer M, Elwenspoek M, Fluitman J (1996) A survey on the reactive ion etching of silicon in microtechnology. J Micromech Microeng 6(1):14
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