In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the proce...
In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.
In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p-pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p-pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n-drift layer due to the trenched p-pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.
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문제 정의
This paper described an SJ TGMOSFET manufactured using a p-pillar forming process through the use of a deep trench and BSG doping technology to reduce the complexity of the process. The p-pillar region was built from the lateral boron diffusion from the BSG film and the annealing after the silicon deep etching process.
제안 방법
The p-pillar region is built from the lateral boron diffusion from the boron silicate glass (BSG) film and annealing after the deep etching process of the silicon. Considering the required breakdown voltage,process optimization, such as regarding p-pillar depth and BSG doping concentration, is conducted using a two-dimensionalSILVACO process and device simulations.
This proves that an equal charge balance between the p-pillar and n-pillar occurs at that concentration. Investigating the effects of the trenched p-pillar on the electric field distribution and breakdown voltage of theMOSFET, a two-dimensional electric field and current flow simulations are conducted.
성능/효과
8, the breakdown voltage of the SJ trench gate devices is approximately 28% higher than that of conventional trench gate devices owing to the effect of the charge balance between the boron-doped p-pillar and n-drift region. However, based on the device simulation results, the RON of the SJ TGMOSFET is approximately 16% higher than that of the conventionalTGMOSFET.
참고문헌 (10)
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