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Solid-state electronics, v.49 no.7, 2005년, pp.1081 - 1085
Chen, L. (Corresponding author. Tel.: +44 179 251 3181) , Guy, O.J. (fax: +44 179 229 5686.) , Jennings, M.R. (School of Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK) , Igic, P. (School of Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK) , Wilks, S.P. (School of Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK) , Mawby, P.A. (School of Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, UK)
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AbstractAn investigation of the structures and design parameters of 4H–SiC trench inversion-channel MOSFETs using a two-dimensional (2D) numerical device simulation is presented. Material parameters have been adjusted appropriately for the 4H–SiC polytype and a systematic characterisatio...
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