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Abstract ▼ AI-Helper

The effect of millisecond laser annealing on the equivalent oxide thickness (EOT) of 40-nm Al2O3 films is reported. The Al2O3 films were produced on p-type silicon substrate (with 1.5 nm native oxide) by using atomic layer deposition (ALD) and were annealed by using a 940-nm, 400 W diode laser for l...

The effect of millisecond laser annealing on the equivalent oxide thickness (EOT) of 40-nm Al2O3 films is reported. The Al2O3 films were produced on p-type silicon substrate (with 1.5 nm native oxide) by using atomic layer deposition (ALD) and were annealed by using a 940-nm, 400 W diode laser for less than 1 ms. The values of the EOT of the Al2O3 layers were extracted by using the five-element equivalent circuit model, which takes into account the frequency-dependent C-V and G-V data under accumulation conditions (-2 V bias). The procedure reveals that the EOT of the as-grown Al2O3 sample significantly reduced from 16.05 ± 0.59 nm to 10.71 ±1.97 nm after ms laser annealing. An ellipsometry analysis confirmal that the thickness of Al2O3 films was clearly decreased. A reduction in the leakage current was also observed.

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