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NTIS 바로가기Solid-state electronics, v.54 no.9, 2010년, pp.855 - 860
Chiarella, T. (Corresponding author. Tel.: +32 16 28 86 05) , Witters, L. (fax: +32 16 281844.) , Mercha, A. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Kerner, C. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Rakowski, M. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Ortolland, C. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Ragnarsson, L.-Å. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Parvais, B. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , De Keersgieter, A. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Kubicek, S. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Redolfi, A. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Vrancken, C. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Brus, S. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Lauwers, A. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Absil, P. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Biesemans, S. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium) , Hoffmann, T. (IMEC, Kapeldreef 75, 3001 Leuven, Belgium)
AbstractThe multi-gate architecture is considered as a key enabler for further CMOS scaling thanks to its improved electrostatics and short-channel effect control. FinFETs represent one of the architectures of interest within that family together with Ω-gates, Π-gates, gate-all-around&helli...
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