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IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.31 no.6, 2010년, pp.546 - 548
Endo, Kazuhiko (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) , O'uchi, Shin-ichi (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) , Ishikawa, Yuki (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) , Yongxun Liu (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) , Matsukawa, Takashi (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) , Sakamoto, Kunihiro (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) , Tsukada, Junichi (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) , Yamauchi, Hiromi (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan) , Masahara, Meishoku (Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan)
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Variability of TiN FinFET performance is comprehensively studied. It is found that the variation of the in the FinFET occurs and the standard deviations of the of nMOS and pMOS FinFETs are almost the same. From the analytical results, it is found that the variation of the TiN FinFET is due to the wo...
Baravelli, E.., Dixit, A.., Rooyackers, R.., Jurczak, M.., Speciale, N., De Meyer, K... Impact of Line-Edge Roughness on FinFET Matching Performance. IEEE transactions on electron devices, vol.54, no.9, 2466-2474.
Gustin, C., Mercha, A., Loo, J., Subramanian, V., Parvais, B., Dehan, M., Decoutere, S.. Stochastic Matching Properties of FinFETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.27, no.10, 846-848.
Pelgrom, M.J.M., Aad, L., Duinmaijer, C.J., Welbers, A.P.G.. Matching Properties Of MOS Transistors. IEEE journal of solid-state circuits, vol.24, no.5, 1433-1440.
10.1109/IEDM.2008.4796793
VLSI Symp Tech Dig analysis of extra $v_{t}$ variability sources in nmos using takeuchi plot tsunomura 2009 110
Xiong, Shiying, Bokor, J.. Sensitivity of double-gate and FinFETDevices to process variations. IEEE transactions on electron devices, vol.50, no.11, 2255-2261.
Jain, S. C., Schoenmaker, W., Lindsay, R., Stolk, P. A., Decoutere, S., Willander, M., Maes, H. E.. Transient enhanced diffusion of boron in Si. Journal of applied physics, vol.91, no.11, 8919-8941.
VLSI Symp Tech Dig comprehensive analysis of variability sources of finfet characteristics matsukawa 2009 118
10.1109/IEDM.2008.4796792
Hisamoto, D., Lee, Wen-Chin, Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., King, Tsu-Jae, Bokor, J., Hu, Chenming. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm. IEEE transactions on electron devices, vol.47, no.12, 2320-2325.
Yongxun Liu, Kijima, S., Sugimata, E., Masahara, M., Endo, K., Matsukawa, T., Ishii, K., Sakamoto, K., Sekigawa, T., Yamauchi, H., Takanashi, Y., Suzuki, E.. Investigation of the TiN Gate Electrode With Tunable Work Function and Its Application for FinFET Fabrication. IEEE transactions on nanotechnology, vol.5, no.6, 723-730.
Sekigawa, T., Hayashi, Y.. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate. Solid-state electronics, vol.27, no.8, 827-828.
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