[논문]Lateral Trapped-Charge Profiling Based on the Extraction of the Flatband Voltage by Using the Optical Substrate Current in Nitride-Based Charge-Trap Flash Memories

Kang-Seob Roh; Sungwook Park; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/TED.2009.2026320

Abstract ▼ AI-Helper

A lateral charge-profiling technique based on local-flatband-voltage (VFB)monitoring using optical-substrate-current spectroscopy (ISub, photo spectroscopy) in nitride-based charge-trap flash (CTF) memories is proposed. Under optical illumination by photons with above-bandgap energy Eph(>Eg,Si), ISu...

A lateral charge-profiling technique based on local-flatband-voltage (VFB)monitoring using optical-substrate-current spectroscopy (ISub, photo spectroscopy) in nitride-based charge-trap flash (CTF) memories is proposed. Under optical illumination by photons with above-bandgap energy Eph(>Eg,Si), ISub, photo is abruptly increased at the gate voltage VG=VFB due to a sudden increase of the excess minority-carrier diffusion current. As expected in this principle, while the single-step feature of the ISub, photo-VG curve is observed in the case of N-MOSFETs, a multistep response is clearly observed in nitride-based CTF memories. The mechanism of steplike ISub, photo spectroscopy is analyzed, supported by analytical models, and verified by comparison with TCAD simulation results. The results show that the height of the step corresponds to the lateral length LTC of the region, over which localized trapped charges are distributed, and its width to the density Qnit(x)=qNnit(x) [C/cm2] in the nitride storage layer. Based on the proposed ISub, photo spectroscopy, lateral charge profiling is demonstrated in a programmed NROM cell. The validity of the proposed ISub, photo spectroscopy is confirmed by comparing the measured ID-VG characteristics with TCAD simulation incorporating the extracted Nnit(x) by ISub, photo spectroscopy. The proposed lateral charge-profiling technique is expected to be a useful technique for extracting the trapped-charge distribution in NROM and/or multibit CTF memories. This extraction technique has advantages of electrical stress free, exclusion of the effect from interface traps, and the applicability to devices with large gate leakage current.

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[해외논문] Lateral Trapped-Charge Profiling Based on the Extraction of the Flatband Voltage by Using the Optical Substrate Current in Nitride-Based Charge-Trap Flash Memories

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[해외논문] Lateral Trapped-Charge Profiling Based on the Extraction of the Flatband Voltage by Using the Optical Substrate Current in Nitride-Based Charge-Trap Flash Memories

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