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NTIS 바로가기IEICE transactions on electronics, v.E93.C no.10, 2010년, pp.1495 - 1498
SAXENA, Saurabh (Advanced Display Research Center, Kyung Hee University) , JANG, Jin (Advanced Display Research Center, Kyung Hee University)
Crystallization of amorphous silicon on oxide semiconductors using rapid-thermal annealing in vacuum is investigated. A 30nm n-type amorphous silicon (a-Si) is deposited on zinc-oxide (ZnO) and aluminum doped zinc-oxide (ZnO: Al) by PECVD on glass substrate. Rapid-thermal annealing for 30min to 180m...
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