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Solid-state electronics, v.86, 2013년, pp.75 - 78
Min, K.S. , Park, C. , Kang, C.Y. , Park, C.S. , Park, B.J. , Kim, Y.W. , Lee, B.H. , Lee, J.C. , Bersuker, G. , Kirsch, P. , Jammy, R. , Yeom, G.Y.
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For the metal gate patterning of metal gate/high-k dielectric complementary metal-oxide-semiconductor field effect transistors (CMOSFETs), plasma induced damage (PID) was identified during the etching by a conventional reactive ion etching (RIE) and, a neutral beam etching (NBE) technique. NBE uses ...
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