최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기Nanotechnology, v.24 no.38 = no.38, 2013년, pp.384009 -
Park, Sangsu (Gwangju Institute of Science and Technology, Gwangju 500-712, Korea) , Noh, Jinwoo (Gwangju Institute of Science and Technology, Gwangju 500-712, Korea) , Choo, Myung-lae (Gwangju Institute of Science and Technology, Gwangju 500-712, Korea) , Sheri, Ahmad Muqeem (Gwangju Institute of Science and Technology, Gwangju 500-712, Korea) , Chang, Man (Samsung Advanced Institute of Technology, Yongin-si Gyeonggi-do, 446-712, Korea) , Kim, Young-Bae (Samsung Advanced Institute of Technology, Yongin-si Gyeonggi-do, 446-712, Korea) , Kim, Chang Jung (Samsung Advanced Institute of Technology, Yongin-si Gyeonggi-do, 446-712, Korea) , Jeon, Moongu (Gwangju Institute of Science and Technology, Gwangju 500-712, Korea) , Lee, Byung-Geun (Gwangju Institute of Science and Technology, Gwangju 500-712, Korea) , Lee, Byoung Hun (Gwangju Institute of Science and Technology, Gwangju 500-712, Korea) , Hwang, Hyunsang (Pohang University of Science and Technology, Pohang, 790-784, Korea)
Efforts to develop scalable learning algorithms for implementation of networks of spiking neurons in silicon have been hindered by the considerable footprints of learning circuits, which grow as the number of synapses increases. Recent developments in nanotechnologies provide an extremely compact de...
Rajendran, B., Yong Liu, Jae-sun Seo, Gopalakrishnan, K., Chang, Leland, Friedman, D. J., Ritter, M. B.. Specifications of Nanoscale Devices and Circuits for Neuromorphic Computational Systems. IEEE transactions on electron devices, vol.60, no.1, 246-253.
2012 IEEE Int. System on Chip Conf. (SOCC) Kim Y Zhang Y Li P
2012 IEEE Int. Memory Workshop (IMW) Wu Y Yu S Wong H-S P Chen Y-S Lee H-Y Wang S-M Gu P-Y Chen F Tsai M-J
2011 IEDM Tech. Dig. Suri M Bichler O Querlioz D Cueto O Perniola L Sousa V Vuillaume D Gamrat C DeSalvo B
Xin Jin, Lujan, M, Plana, L A, Davies, S, Temple, S, Furber, S B. Modeling Spiking Neural Networks on SpiNNaker. Computing in science & engineering, vol.12, no.5, 91-97.
2010 1947 IEEE Int. Symp. on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems (ISCAS) Schemmel J Brüderle D Grübl A Hock M Meier K Millner S
Markram, Henry. The Blue Brain Project. Nature reviews. Neuroscience, vol.7, no.2, 153-160.
2006 80 Midwest Symp. on Circuits and Systems 1 (MWSCAS1) Lin J Merolla P Arthur J Boahen K
2010 Int. Workshop on Cellular Nanoscale Networks and their Applications (CNNA) Joshi S Deiss S Arnold M Park J Yu T Cauwenberghs G
2007 18 0957-4484 Nanotechnology Snider G S
2011 Proc. of the Custom Integrated Circuits Conf. (CICC) Seo J
2007 IEDM Tech. Dig. Lee M J
Kim, Kuk-Hwan, Gaba, Siddharth, Wheeler, Dana, Cruz-Albrecht, Jose M., Hussain, Tahir, Srinivasa, Narayan, Lu, Wei. A Functional Hybrid MemristorCrossbar-Array/CMOSSystem for Data Storage and Neuromorphic Applications. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.12, no.1, 389-395.
Lee, M.-J., Seo, S., Kim, D.-C., Ahn, S.-E., Seo, D. H., Yoo, I.-K., Baek, I.-G., Kim, D.-S., Byun, I.-S., Kim, S.-H., Hwang, I.-R., Kim, J.-S., Jeon, S.-H., Park, B. H.. A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories. Advanced materials, vol.19, no.1, 73-76.
2009 IEDM Tech. Dig. Kau D
2010 5556229 205 Tech. Dig. VLSI Symp. Gopalakrishnan K
Shin, Jungho, Kim, Insung, Biju, Kuyyadi P., Jo, Minseok, Park, Jubong, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang. TiO 2 -based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application. Journal of applied physics, vol.109, no.3, 033712-.
Kim, Kuk-Hwan, Hyun Jo, Sung, Gaba, Siddharth, Lu, Wei. Nanoscale resistive memory with intrinsic diode characteristics and long endurance. Applied physics letters, vol.96, no.5, 053106-.
Puthentheradam, Sarath C., Schroder, Dieter K., Kozicki, Michael N.. Inherent diode isolation in programmable metallization cell resistive memory elements. Applied physics. A, Materials science & processing, vol.102, no.4, 817-826.
Qingyun Zuo, Shibing Long, Shiqian Yang, Qi Liu, Lubing Shao, Qin Wang, Sen Zhang, Yingtao Li, Yan Wang, Ming Liu.
Huang, Jiun-Jia, Kuo, Chih-Wei, Chang, Wei-Chen, Hou, Tuo-Hung. Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode. Applied physics letters, vol.96, no.26, 262901-.
Chang, Ting, Jo, Sung-Hyun, Kim, Kuk-Hwan, Sheridan, Patrick, Gaba, Siddharth, Lu, Wei. Synaptic behaviors and modeling of a metal oxide memristive device. Applied physics. A, Materials science & processing, vol.102, no.4, 857-863.
Jo, Sung Hyun, Chang, Ting, Ebong, Idongesit, Bhadviya, Bhavitavya B., Mazumder, Pinaki, Lu, Wei. Nanoscale Memristor Device as Synapse in Neuromorphic Systems. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.10, no.4, 1297-1301.
2010 IEDM Tech. Dig. Yu S Wong H-S P
2011 5 26 Front. Neurosci. Zamarreno C
2010 5556121 53 Tech. Dig. VLSI Symp. Jo M
*원문 PDF 파일 및 링크정보가 존재하지 않을 경우 KISTI DDS 시스템에서 제공하는 원문복사서비스를 사용할 수 있습니다.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.