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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.37 no.8, 2016년, pp.994 - 997
Woo, Jiyong (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Moon, Kibong (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Song, Jeonghwan (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Lee, Sangheon (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Kwak, Myounghun (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Park, Jaesung (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Hwang, Hyunsang
We analyze the response of identical pulses on a filamentary resistive memory (RRAM) to implement the synapse function in neuromorphic systems. Our findings show that the multilevel states of conductance are achieved by varying the measurement conditions related to the formation and rupture of a con...
Proc Symp VLSI Technol Understanding of the intrinsic characteristics and memory trade-offs of sub- $\mu$ A filamentary RRAM operation goux 2013 162t
Burr, Geoffrey W., Shelby, Robert M., Sidler, Severin, di Nolfo, Carmelo, Junwoo Jang, Boybat, Irem, Shenoy, Rohit S., Narayanan, Pritish, Virwani, Kumar, Giacometti, Emanuele U., Kurdi, Bulent N., Hyunsang Hwang. Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element. IEEE transactions on electron devices, vol.62, no.11, 3498-3507.
Jun-Woo Jang, Sangsu Park, Burr, Geoffrey W., Hyunsang Hwang, Yoon-Ha Jeong. Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.36, no.5, 457-459.
Vincent, Adrien F., Larroque, Jerome, Locatelli, Nicolas, Ben Romdhane, Nesrine, Bichler, Olivier, Gamrat, Christian, Wei Sheng Zhao, Klein, Jacques-Olivier, Galdin-Retailleau, Sylvie, Querlioz, Damien. Spin-Transfer Torque Magnetic Memory as a Stochastic Memristive Synapse for Neuromorphic Systems. IEEE transactions on biomedical circuits and systems, vol.9, no.2, 166-174.
Kaneko, Yukihiro, Nishitani, Yu, Ueda, Michihito. Ferroelectric Artificial Synapses for Recognition of a Multishaded Image. IEEE transactions on electron devices, vol.61, no.8, 2827-2833.
Jo, Sung Hyun, Chang, Ting, Ebong, Idongesit, Bhadviya, Bhavitavya B., Mazumder, Pinaki, Lu, Wei. Nanoscale Memristor Device as Synapse in Neuromorphic Systems. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.10, no.4, 1297-1301.
Shimeng Yu, Yi Wu, Jeyasingh, R., Kuzum, D., Wong, H. P.. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation. IEEE transactions on electron devices, vol.58, no.8, 2729-2737.
Principles of Neural Science kandel 1985
Mead, C.. Neuromorphic electronic systems. Proceedings of the IEEE, vol.78, no.10, 1629-1636.
Suri, M., Querlioz, D., Bichler, O., Palma, G., Vianello, E., Vuillaume, D., Gamrat, C., DeSalvo, B.. Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses. IEEE transactions on electron devices, vol.60, no.7, 2402-2409.
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