[논문]Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications

Padovani, Andrea; Woo, Jiyong; Hwang, Hyunsang; Larcher, Luca

doi:10.1109/LED.2018.2821707

[해외논문] Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications 원문보기

IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.39 no.5, 2018년, pp.672 - 675

Padovani, Andrea (MDLab s.r.l., Reggio Emilia, Italy) , Woo, Jiyong (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Hwang, Hyunsang (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Larcher, Luca (Dipartimento di Scienze e Metodi dell’Ingegneria, Universita di Modena e Reggio Emilia, Reggio Emilia, Italy)

Abstract ▼ AI-Helper

We use experiments and device simulations to investigate pulsed SET operation of HfO2-based RRAM devices for their possible use as electronic synapses. The application of a train of identical pulses only allows for an abrupt change of the device current, which is not suitable for synaptic devices. By using simulations, we link the microscopic properties and changes of the conductive filament during the pulsed operation to the measured conductance and its dependence on pulse voltage, width, and number. The results allow us to derive guidelines that we use to design optimized SET pulses (or pulse trains) allowing extending the conventional binary operation of HfO2-based RRAMs to the multi-level cell operation required by electronic synapses.

참고문헌 (19)

Woo, Jiyong, Moon, Kibong, Song, Jeonghwan, Lee, Sangheon, Kwak, Myounghun, Park, Jaesung, Hwang, Hyunsang. Improved Synaptic Behavior Under Identical Pulses Using AlO_x/HfO₂ Bilayer RRAM Array for Neuromorphic Systems. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.37, no.8, 994-997.

상세보기
Ginestra Software 2017
Padovani, Andrea, Larcher, Luca, Pirrotta, Onofrio, Vandelli, Luca, Bersuker, Gennadi. Microscopic Modeling of HfO_x RRAM Operations: From Forming to Switching. IEEE transactions on electron devices, vol.62, no.6, 1998-2006.

상세보기
Ielmini, D.. Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth. IEEE transactions on electron devices, vol.58, no.12, 4309-4317.

상세보기
Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Perniola, Luca, Miranda, Enrique, Liu, Ming, Suñé, Jordi. A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.34, no.8, 999-1001.

상세보기
10.1109/IPFA.2014.6898205
Raghavan, N.. Application of the defect clustering model for forming, SET and RESET statistics in RRAM devices. Microelectronics reliability, vol.64, 54-58.

상세보기
Lanza, Mario. A Review on Resistive Switching in High-k Dielectrics: A Nanoscale Point of View Using Conductive Atomic Force Microscope. Materials, vol.7, no.3, 2155-2182.

상세보기
Nminibapiel, David M., Veksler, Dmitry, Shrestha, Pragya R., Kim, Ji-Hong, Campbell, Jason P., Ryan, Jason T., Baumgart, Helmut, Cheung, Kin P.. Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.3, 326-329.

상세보기
Nminibapiel, David M., Veksler, Dmitry, Shrestha, Pragya R., Campbell, Jason P., Ryan, Jason T., Baumgart, Helmut, Cheung, Kin P.. Impact of RRAM Read Fluctuations on the Program-Verify Approach. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.6, 736-739.

상세보기
IEEE IEDM Tech Dig Phase change memory as synapse for ultra-dense neuromorphic systems: Application to complex visual pattern extraction suri 2011 4.4.1
Kuzum, Duygu, Yu, Shimeng, Philip Wong, H-S. Synaptic electronics: materials, devices and applications. Nanotechnology, vol.24, no.38, 382001-.

상세보기
Ielmini, D., Nardi, F., Balatti, S.. Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM. IEEE transactions on electron devices, vol.59, no.8, 2049-2056.

상세보기
Shimeng Yu, Yi Wu, Jeyasingh, R., Kuzum, D., Wong, H. P.. An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation. IEEE transactions on electron devices, vol.58, no.8, 2729-2737.

상세보기
10.1109/ISCAS.2016.7527253
10.1109/IEDM.2012.6479018
Merolla, Paul A., Arthur, John V., Alvarez-Icaza, Rodrigo, Cassidy, Andrew S., Sawada, Jun, Akopyan, Filipp, Jackson, Bryan L., Imam, Nabil, Guo, Chen, Nakamura, Yutaka, Brezzo, Bernard, Vo, Ivan, Esser, Steven K., Appuswamy, Rathinakumar, Taba, Brian, Amir, Arnon, Flickner, Myron D., Risk, William P., Manohar, Rajit, Modha, Dharmendra S.. A million spiking-neuron integrated circuit with a scalable communication network and interface. Science, vol.345, no.6197, 668-673.

상세보기
Garbin, Daniele, Vianello, Elisa, Bichler, Olivier, Rafhay, Quentin, Gamrat, Christian, Ghibaudo, Gerard, DeSalvo, Barbara, Perniola, Luca. HfO₂-Based OxRAM Devices as Synapses for Convolutional Neural Networks. IEEE transactions on electron devices, vol.62, no.8, 2494-2501.

상세보기
Jiyong Woo, Padovani, Andrea, Kibong Moon, Myounghun Kwak, Larcher, Luca, Hyunsang Hwang. Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.38, no.9, 1220-1223.

상세보기

LOADING...

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 논문명, 저널/프로시딩명, 저자 , 발행년, 권, 호, 시작페이지, 끝페이지, 발행기관 관리번호, 논문명, 대등논문명, 저자 , 저널/프로시딩명, 발행기관, 발행년, 발행언어, 권, 호, 시작페이지, 끝페이지, ISBN, ISSN, 주제분야, 키워드, 초록(한글), 초록(영문), 저자(소속기관)
저장형식	Text(ASCII format) Excel format RefWorks Direct Export RIS format (for Reference Manager, ProCite, EndNote), Scholar's Aids, Mendeley
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

[해외논문] Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications 원문보기

Abstract ▼ AI-Helper

참고문헌 (19)

이 논문을 인용한 문헌

연구과제 타임라인

관련 콘텐츠

원문 보기

원문 URL 링크

오픈액세스(OA) 유형

이 논문과 함께 이용한 콘텐츠

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트

연합인증

[해외논문] Understanding and Optimization of Pulsed SET Operation in HfOx-Based RRAM Devices for Neuromorphic Computing Applications 원문보기

Abstract ▼ AI-Helper

참고문헌 (19)

이 논문을 인용한 문헌

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

전체(0) 논문(0) 특허(0) 보고서(0)

관련 콘텐츠

원문 보기

원문 URL 링크

오픈액세스(OA) 유형

이 논문과 함께 이용한 콘텐츠

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

선택된 텍스트