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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.35 no.7, 2014년, pp.726 - 728
Jaehyun Lee (Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea) , Mincheol Shin (Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea)
EDISON 유발 논문
계산과학플랫폼 EDISON을 활용하여 발표된 논문The performance of III-V channel ultra-thin-body Schottky barrier (SB) MOSFETs is assessed by quantum mechanical simulations. All the Gamma-, L-, and Delta-valleys are included in the calculations, with their effective masses adjusted by the sp(3)d(5)s* tight-binding method. Our results show that In...
Raseong Kim, Rakshit, T, Kotlyar, R, Hasan, S, Weber, C E. Effects of Surface Orientation on the Performance of Idealized III–V Thin-Body Ballistic n-MOSFETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.32, no.6, 746-748.
Zhao, Yanjie, Candebat, Drew, Delker, Collin, Zi, Yunlong, Janes, David, Appenzeller, Joerg, Yang, Chen. Understanding the Impact of Schottky Barriers on the Performance of Narrow Bandgap Nanowire Field Effect Transistors. Nano letters : a journal dedicated to nanoscience and nanotechnology, vol.12, no.10, 5331-5336.
Yang Liu, Neophytou, N., Klimeck, G., Lundstrom, M.S.. Band-Structure Effects on the Performance of III–V Ultrathin-Body SOI MOSFETs. IEEE transactions on electron devices, vol.55, no.5, 1116-1122.
Boykin, Timothy B., Klimeck, Gerhard, Oyafuso, Fabiano. Valence band effective-mass expressions in thesp3d5s*empirical tight-binding model applied to a Si and Ge parametrization. Physical review. B, Condensed matter and materials physics, vol.69, no.11, 115201-.
Boykin, Timothy B., Klimeck, Gerhard, Bowen, R. Chris, Oyafuso, Fabiano. Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory. Physical review. B, Condensed matter and materials physics, vol.66, no.12, 125207-.
Jancu, Jean-Marc, Scholz, Reinhard, Beltram, Fabio, Bassani, Franco. Empiricalspds*tight-binding calculation for cubic semiconductors: General method and material parameters. Physical review. B, Condensed matter and materials physics, vol.57, no.11, 6493-6507.
Shin, Mincheol. Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k⋅p method. Journal of applied physics, vol.106, no.5, 054505-.
Alam, Khairul, Takagi, Shinichi, Takenaka, Mitsuru. Analysis and Comparison of L-Valley Transport in GaAs, GaSb, and Ge Ultrathin-Body Ballistic nMOSFETs. IEEE transactions on electron devices, vol.60, no.12, 4213-4218.
Mehrotra, Saumitra R., Povolotskyi, Michael, Elias, Doron Cohen, Kubis, Tillmann, Law, Jeremy J. M., Rodwell, Mark J. W., Klimeck, Gerhard.
Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed
Mincheol Shin. Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs. IEEE transactions on electron devices, vol.55, no.3, 737-742.
Guo, Jing, Lundstrom, M.S.. A computational study of thin-body, double-gate, Schottky barrier MOSFETs. IEEE transactions on electron devices, vol.49, no.11, 1897-1902.
Wu, Jia-Rong, Wu, Yung-Hsien, Hou, Chin-Yao, Wu, Min-Lin, Lin, Chia-Chun, Chen, Lun-Lun. Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions. Applied physics letters, vol.99, no.25, 253504-.
Yi Tong, Bin Liu, Lim, Phyllis Shi Ya, Yee-Chia Yeo. Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.33, no.6, 773-775.
Yokoyama, Masafumi, Kim, Sanghyeon, Zhang, Rui, Taoka, Noriyuki, Urabe, Yuji, Maeda, Tatsuro, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Ichikawa, Osamu, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, Takenaka, Mitsuru, Takagi, Shinichi. III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding. Applied physics express, vol.5, no.7, 076501-.
Zheng, Zhi-Wei, Ku, Teng-Chieh, Liu, Ming, Chin, Albert. Ohmic contact on n-type Ge using Yb-germanide. Applied physics letters, vol.101, no.22, 223501-.
Jang, Moongyu, Kim, Yarkyeon, Shin, Jaeheon, Lee, Seongjae, Park, Kyoungwan. A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor. Applied physics letters, vol.84, no.5, 741-743.
Zhu, S., Chen, J., Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L.. N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.25, no.8, 565-567.
Luisier, M.. Performance Comparison of GaSb, Strained-Si, and InGaAs Double-Gate Ultrathin-Body n-FETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.32, no.12, 1686-1688.
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