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11. Mincheol Shin. Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs. IEEE transactions on electron devices, vol.55, no.3, 737-742.

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14. Yi Tong, Bin Liu, Lim, Phyllis Shi Ya, Yee-Chia Yeo. Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.33, no.6, 773-775.

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20. Luisier, M.. Performance Comparison of GaSb, Strained-Si, and InGaAs Double-Gate Ultrathin-Body n-FETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.32, no.12, 1686-1688.

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