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NTIS 바로가기Nanoscale research letters, v.9 no.1, 2014년, pp.619 - 619
Jeong, Seung-Ki (Department of Materials Science and Engineering, 222 Wangsimni-Ro, Seongdong-Gu, Hanyang University, Seoul 133-791, Republic of Korea) , Kim, Myeong-Ho (Department of Materials Science and Engineering, 222 Wangsimni-Ro, Seongdong-Gu, Hanyang University, Seoul 133-791, Republic of Korea) , Lee, Sang-Yeon (Department of Materials Science and Engineering and Department of Energy System Research, Ajou University, 206 Worldcup-ro, Yeongtong-Gu, Suwon 443-739, Republic of Korea) , Seo, Hyungtak (Department of Materials Science and Engineering and Department of Energy System Research, Ajou University, 206 Worldcup-ro, Yeongtong-Gu, Suwon 443-739, Republic of Korea) , Choi, Duck-Kyun (Department of Materials Science and Engineering, 222 Wangsimni-Ro, Seongdong-Gu, Hanyang University, Seoul 133-791, Republic of Korea)
In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-st...
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