[논문]Recent Advances in a-IGZO Thin Film Transistor Devices: A Short Review

Jingwen Chen; Fucheng Wang; Yifan Hu; Jaewoong Cho; Yeojin Jeong; Duy Phong Pham; Junsin Yi

doi:10.4313/jkem.2023.36.5.5

Recent Advances in a-IGZO Thin Film Transistor Devices: A Short Review 원문보기

전기전자재료학회논문지 = Journal of the Korean institute of electronic material engineers, v.36 no.5, 2023년, pp.463 - 473

Jingwen Chen (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Fucheng Wang (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Yifan Hu (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Jaewoong Cho (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Yeojin Jeong (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Duy Phong Pham (Department of Electrical and Computer Engineering, Sungkyunkwan University) , Junsin Yi (College of Information and Communication Engineering, Sungkyunkwan University)

Abstract ▼ AI-Helper

In recent years, the transparent amorphous oxide thin film transistor represented by indium-gallium-zinc-oxide (IGZO) has become the first choice of the next generation of integrated circuit control components. This article contributes an overview of IGZO thin-film transistors (TFTs), including their fundamental principles and recent advancements. The paper outlines various TFT structures and places emphasis on the fabrication process of the active layer. The result showed that the size of the active layer including the length-to-width ratio and the width could have a significant effect on the mobility. And the process of TFT could influence the crystal structure of IGZO thin film. Furthermore, the article presents an overview of recent applications of IGZO TFTs, such as their use in display drivers and TFT memories. At last, the future development of IGZO TFT is forecasted in this paper.

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표/그림 (11)

표 Table 1. Research of a-IGZO TFT limitation.
그림 Fig. 1. The BCE structure TFT [17].
그림 Fig. 2. Operating mechanism of n-type TFT [24].
그림 Fig. 3. The atomic structure model of covalent semiconductors (left) and AOSs (right) [28].
그림 Fig. 4. The relationship between field effect mobility (linear region) and VGS of IGZO TFT devices of different lengths and widths of 20 μm at 0.1 (V) of VDS [29].
그림 Fig. 5. (a)The trench-shaped vertical channel transistor and (b) the variation between μFE and the width of the channel [19].
그림 Fig. 6. (a) The saturation mobility of TFT transistors with different In₂O₃ film thicknesses and (b) the linear mobility of TFT transistors with different channel lengths [30].
표 Table 2. The materials and processes of TFT active layer in recent years.
그림 Fig. 7. (a) The saturation mobility of TFT transistors with different In₂O₃ film thicknesses and (b) the linear mobility of TFT transistors with different channel lengths [7,31].
그림 Fig. 8. TFT-LCD process.
그림 Fig. 9. Back gate structure TFT memory.

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