[논문]Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

Woo, Jiyong; Moon, Kibong; Song, Jeonghwan; Lee, Sangheon; Kwak, Myounghun; Park, Jaesung; Hwang, Hyunsang

doi:10.1109/LED.2016.2582859

[해외논문] Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.37 no.8, 2016년, pp.994 - 997

Woo, Jiyong (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Moon, Kibong (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Song, Jeonghwan (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Lee, Sangheon (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Kwak, Myounghun (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Park, Jaesung (Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, South Korea) , Hwang, Hyunsang

Abstract ▼ AI-Helper

We analyze the response of identical pulses on a filamentary resistive memory (RRAM) to implement the synapse function in neuromorphic systems. Our findings show that the multilevel states of conductance are achieved by varying the measurement conditions related to the formation and rupture of a conductive filament. Furthermore, abrupt set switching behavior in the RRAM leads to an unchanged conductance state, leading to degradation in the accuracy of pattern recognition. Thus, we demonstrate a linear potentiation (or depression) behavior of conductance under identical pulses using the effect of barrier layer on the switching, which was realized by fabricating an RRAM on top of an Al electrode. As a result, when the range of the conductance is symmetrically controlled at both polarities, a significantly improved accuracy is achieved for pattern recognition using a neural network with a multilayer perceptron.

참고문헌 (14)

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[해외논문] Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

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[해외논문] Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems

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