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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.37 no.12, 2016년, pp.1613 - 1616
Han, Sang-Woo (School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea) , Noh, Youngkyun (School of Electrical Engineering, Hanyang University, Seoul, South Korea) , Jo, Min-Gi (School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea) , Kim, Seung-Hwan (Metamaterial Electronic Device Research Center, Hongik University, Seoul, South Korea) , Oh, Jae-Eung (School of Electrical Engineering, Hanyang University, Seoul, South Korea) , Seo, Kwang-Seok (Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea) , Cha, Ho-Young
Due to the difficulty of GaN epitaxy growth on Si(001) substrate, GaN-on-Si wafers are generally grown on Si(111) substrates. Because of the poor electrical characteristics of Si(111) orientation, monolithic integration between CMOS ICs and GaN devices cannot be implemented on GaN-on-Si(111) wafers....
Damilano, Benjamin, Natali, Franck, Brault, Julien, Huault, Thomas, Lefebvre, Denis, Tauk, Rabih, Frayssinet, Eric, Moreno, Jean-Christophe, Cordier, Yvon, Semond, Fabrice, Chenot, Sébastien, Massies, Jean. Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate. Applied physics express, vol.1, no.12, 121101-.
Min Yang, Gusev, E.P., Meikei Ieong, Gluschenkov, O., Boyd, D.C., Chan, K.K., Kozlowski, P.M., D'Emic, C.P., Sicina, R.M., Jamison, P.C., Chou, A.I.. Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.24, no.5, 339-341.
Teramoto, A., Hamada, T., Yamamoto, M., Gaubert, P., Akahori, H., Nii, K., Hirayama, M., Arima, K., Endo, K., Sugawa, S., Ohmi, T.. Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface. IEEE transactions on electron devices, vol.54, no.6, 1438-1445.
J Vac Sci Technol B Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit hoke 2011 10.1116/1.3665220 30 2b101
Kim, Y.H., Lee, J.H., Noh, Y.K., Oh, J.E., Ahn, S.J.. Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study. Thin solid films, vol.576, 61-67.
Lee, J.G., Kim, H.S., Seo, K.S., Cho, C.H., Cha, H.Y.. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors. Solid-state electronics, vol.122, 32-36.
Han, Sang-Woo, Lee, Jae-Gil, Cho, Chun-Hyung, Cha, Ho-Young. Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor. Applied physics express, vol.7, no.11, 111002-.
Bhat, Thirumaleshwara N., Rajpalke, Mohana K., Roul, Basanta, Kumar, Mahesh, Krupanidhi, S. B.. Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy. Journal of applied physics, vol.110, no.9, 093718-.
10.1002/(SICI)1521-396X(199911)176:1<711::AID-PSSA711>3.0.CO;2-Y
Joblot, S., Semond, F., Cordier, Y., Lorenzini, P., Massies, J.. High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy. Applied physics letters, vol.87, no.13, 133505-.
Schulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A.. Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of crystal growth, vol.289, no.2, 485-488.
Cordier, Yvon, Moreno, Jean-Christophe, Baron, Nicolas, Frayssinet, Eric, Chenot, SÉbastien, Damilano, Benjamin, Semond, Fabrice. Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110). IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.29, no.11, 1187-1189.
Joblot, S., Cordier, Y., Semond, F., Chenot, S., Vennéguès, P., Tottereau, O., Lorenzini, P., Massies, J.. AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy. Superlattices and microstructures, vol.40, no.4, 295-299.
Dadgar, A, Schulze, F, Wienecke, M, Gadanecz, A, Bläsing, J, Veit, P, Hempel, T, Diez, A, Christen, J, Krost, A. Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction. New journal of physics, vol.9, no.10, 389-389.
Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., Hilsenbeck, J.. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. Journal of applied physics, vol.85, no.6, 3222-3233.
Cordier, Y., Moreno, J.C., Baron, N., Frayssinet, E., Chauveau, J.M., Nemoz, M., Chenot, S., Damilano, B., Semond, F.. Growth of GaN based structures on Si(110) by molecular beam epitaxy. Journal of crystal growth, vol.312, no.19, 2683-2688.
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