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NTIS 바로가기IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.38 no.8, 2017년, pp.1090 - 1093
Kim, Hyun-Seop (School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea) , Han, Sang-Woo (School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea) , Jang, Won-Ho (School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea) , Cho, Chun-Hyung (Department of Electronic and Electrical Engineering, Hongik University, Sejong, South Korea) , Seo, Kwang-Seok (Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea) , Oh, Jungwoo (School of Integrated Technology, Yonsei University, Incheon, South Korea) , Cha, Ho-Young
We have developed a silicon oxynitride (SiON) deposition process using a plasma-enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal-insulator-semiconductor field-effect transistors (MISFETs). The optimized SiON film had a relative dielectric constant of 5.3 and a bre...
Ye Wang, Maojun Wang, Bing Xie, Wen, Cheng P., Jinyan Wang, Yilong Hao, Wengang Wu, Chen, Kevin J., Bo Shen.
High-Performance Normally-Off
Maojun Wang, Ye Wang, Chuan Zhang, Bing Xie, Wen, Cheng P., Jinyan Wang, Yilong Hao, Wengang Wu, Chen, Kevin J., Bo Shen.
900 V/1.6
Zhe Xu, Jinyan Wang, Yong Cai, Jingqian Liu, Chunyan Jin, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, Yue Hao.
Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With
Proc IEEE Int Symp Power Semiconductor Devices ICs Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and RF-sputtered HfO2 gate insulator ahn 2013 311
Anderson, Travis J., Wheeler, Virginia D., Shahin, David I., Tadjer, Marko J., Koehler, Andrew D., Hobart, Karl D., Christou, Aris, Kub, Francis J., Eddy Jr., Charles R.. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition. Applied physics express, vol.9, no.7, 071003-.
Long, Rathnait D., McIntyre, Paul C.. Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices. Materials, vol.5, no.12, 1297-1335.
Green, M. L., Gusev, E. P., Degraeve, R., Garfunkel, E. L.. Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits. Journal of applied physics, vol.90, no.5, 2057-2121.
Arulkumaran, S., Egawa, T., Ishikawa, H., Jimbo, T., Sano, Y.. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride. Applied physics letters, vol.84, no.4, 613-615.
Desmaris, V., Shiu, J.Y., Rorsman, N., Zirath, H., Chang, E.Y.. Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs. Solid-state electronics, vol.52, no.5, 632-636.
Morgan, Daniel, Sultana, Mahbuba, Fatima, Husna, Sugiyama, Sho, Fareed, Qhalid, Adivarahan, Vinod, Lachab, Mohamed, Khan, Asif. Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V. Applied physics express, vol.4, no.11, 114101-.
Han, Sang-Woo, Lee, Jae-Gil, Cho, Chun-Hyung, Cha, Ho-Young. Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor. Applied physics express, vol.7, no.11, 111002-.
Bong-Ryeol Park, Jae-Gil Lee, Woojin Choi, Hyungtak Kim, Kwang-Seok Seo, Ho-Young Cha.
High-Quality ICPCVD
Semiconductor Material and Device Characterization schroder 2006 347
Ambacher, O., Foutz, B., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Sierakowski, A. J., Schaff, W. J., Eastman, L. F., Dimitrov, R., Mitchell, A., Stutzmann, M.. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. Journal of applied physics, vol.87, no.1, 334-344.
IEEE Electron Device Lett Improvement of V $_{th}$ instability in normally-off GaN MIS-HFETs employing PEALD-SiNx as an interfacial layer choi 2014 10.1109/LED.2013.2291551 35 30
Lee, J.G., Kim, H.S., Seo, K.S., Cho, C.H., Cha, H.Y.. High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors. Solid-state electronics, vol.122, 32-36.
Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang, Xinyu Liu. Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess. IEEE transactions on electron devices, vol.63, no.2, 614-619.
Ki-Won Kim, Sung-Dal Jung, Dong-Seok Kim, Hee-Sung Kang, Ki-Sik Im, Jae-Joon Oh, Jong-Bong Ha, Jai-Kwang Shin, Jung-Hee Lee.
Effects of TMAH Treatment on Device Performance of Normally Off
Lee, Jae-Gil, Park, Bong-Ryeol, Lee, Ho-Jung, Lee, Minseong, Seo, Kwang-Seok, Cha, Ho-Young. State-of-the-Art AlGaN/GaN-on-Si Heterojunction Field Effect Transistors with Dual Field Plates. Applied physics express, vol.5, no.6, 066502-.
Lee, Jae-Gil, Kim, Hyun-Seop, Lee, Jung-Yeon, Seo, Kwang-Seok, Cha, Ho-Young. Investigation of flat band voltage shift in recessed-gate GaN MOSHFETs with post-metallization-annealing in oxygen atmosphere. Semiconductor science and technology, vol.30, no.11, 115008-.
Woojin Choi, Ogyun Seok, Hojin Ryu, Ho-Young Cha, Kwang-Seok Seo.
High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-
Phys Status Solidi A High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiNx MIS structure kang 0
Appl Phys Exp Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V) freedsman 2014 10.7567/APEX.7.041003 7 41003
Winter, Roy, Ahn, Jaesoo, McIntyre, Paul C., Eizenberg, Moshe. New method for determining flat-band voltage in high mobility semiconductors. Journal of vacuum science and technology. materials, processing, measurement, & phenomena : JVST B. B, Nanotechnology & microelectronics, vol.31, no.3, 030604-.
Kambayashi, H., Satoh, Y., Kokawa, T., Ikeda, N., Nomura, T., Kato, S.. High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique. Solid-state electronics, vol.56, no.1, 163-167.
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