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Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide

Vacuum, v.155, 2018년, pp.428 - 433  

Kim, Hyun-Seop (Hongik University, School of Electrical and Electronic Engineering) ,  Eom, Su-Keun (Seoul National University, Department of Electrical and Computer Engineering) ,  Seo, Kwang-Seok (Seoul National University, Department of Electrical and Computer Engineering) ,  Kim, Hyungtak (Hongik University, School of Electrical and Electronic Engineering) ,  Cha, Ho-Young (Hongik University, School of Electrical and Electronic Engineering)

Abstract AI-Helper 아이콘AI-Helper

Abstract This paper reports the first-time evaluation of the time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with plasma enhanced chemical vapor deposition (PECVD) SiO2 gate oxide. The interface fixed cha...

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참고문헌 (37)

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