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NTIS 바로가기Vacuum, v.155, 2018년, pp.428 - 433
Kim, Hyun-Seop (Hongik University, School of Electrical and Electronic Engineering) , Eom, Su-Keun (Seoul National University, Department of Electrical and Computer Engineering) , Seo, Kwang-Seok (Seoul National University, Department of Electrical and Computer Engineering) , Kim, Hyungtak (Hongik University, School of Electrical and Electronic Engineering) , Cha, Ho-Young (Hongik University, School of Electrical and Electronic Engineering)
Abstract This paper reports the first-time evaluation of the time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with plasma enhanced chemical vapor deposition (PECVD) SiO2 gate oxide. The interface fixed cha...
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