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NTIS 바로가기Journal of vacuum science and technology. materials, processing, measurement, & phenomena : JVST B. B, Nanotechnology & microelectronics, v.35 no.6, 2017년, pp.060601 -
Kim, Dong-Hwan (Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University , Seoul 08826, South Korea) , Eom, Su-Keun (Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University , Seoul 08826, South Korea) , Jeong, Jun-Seok (Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University , Seoul 08826, South Korea) , Lee, Jae-Gil (Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University , Seoul 08826, South Korea) , Seo, Kwang-Seok (Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University , Seoul 08826, South Korea) , Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University , Seoul 04066, South Korea)
The effect that insertion gate metals have on GaN millimeter-wave devices undergoing a postmetallization annealing (PMA) process was investigated. It was found that the PMA process increases the gate resistance (Rg), which is responsible for a decrease in the maximum oscillation frequency (fmax). Th...
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