[논문]Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE

Han, Sang-Woo; Noh, Youngkyun; Jo, Min-Gi; Kim, Seung-Hwan; Oh, Jae-Eung; Seo, Kwang-Seok; Cha, Ho-Young

doi:10.1109/LED.2016.2621184

Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE

IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.37 no.12, 2016년, pp.1613 - 1616

Han, Sang-Woo (School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea) , Noh, Youngkyun (School of Electrical Engineering, Hanyang University, Seoul, South Korea) , Jo, Min-Gi (School of Electronic and Electrical Engineering, Hongik University, Seoul, South Korea) , Kim, Seung-Hwan (Metamaterial Electronic Device Research Center, Hongik University, Seoul, South Korea) , Oh, Jae-Eung (School of Electrical Engineering, Hanyang University, Seoul, South Korea) , Seo, Kwang-Seok (Department of Electrical and Computer Engineering, Seoul National University, Seoul, South Korea) , Cha, Ho-Young

Abstract ▼ AI-Helper

Due to the difficulty of GaN epitaxy growth on Si(001) substrate, GaN-on-Si wafers are generally grown on Si(111) substrates. Because of the poor electrical characteristics of Si(111) orientation, monolithic integration between CMOS ICs and GaN devices cannot be implemented on GaN-on-Si(111) wafers. At this point of view, Si(110) substrate will be an alternative choice for GaN-on-Si epitaxy growth, because it has good atomic arrangement with AlN seed layer and an advantage of excellent hole mobility characteristics over Si(001). We have developed high quality GaN epitaxy growth technique on Si(110) substrate using NH3 MBE and demonstrated normally-off AlGaN/GaN-on-Si(110) metal-oxide-semiconductor-heterojunction field-effect transistors with an OFF-state breakdown voltage of 610 V. The fabricated device exhibited promising characteristics comparable with those achieved on conventional GaN-on-Si(111) wafers.

참고문헌 (17)

Damilano, Benjamin, Natali, Franck, Brault, Julien, Huault, Thomas, Lefebvre, Denis, Tauk, Rabih, Frayssinet, Eric, Moreno, Jean-Christophe, Cordier, Yvon, Semond, Fabrice, Chenot, Sébastien, Massies, Jean. Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate. Applied physics express, vol.1, no.12, 121101-.

상세보기
Min Yang, Gusev, E.P., Meikei Ieong, Gluschenkov, O., Boyd, D.C., Chan, K.K., Kozlowski, P.M., D'Emic, C.P., Sicina, R.M., Jamison, P.C., Chou, A.I.. Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO₂ gate dielectrics. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.24, no.5, 339-341.

상세보기
Teramoto, A., Hamada, T., Yamamoto, M., Gaubert, P., Akahori, H., Nii, K., Hirayama, M., Arima, K., Endo, K., Sugawa, S., Ohmi, T.. Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface. IEEE transactions on electron devices, vol.54, no.6, 1438-1445.

상세보기
10.1049/el.2010.3167
J Vac Sci Technol B Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit hoke 2011 10.1116/1.3665220 30 2b101

상세보기
Kim, Y.H., Lee, J.H., Noh, Y.K., Oh, J.E., Ahn, S.J.. Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study. Thin solid films, vol.576, 61-67.

상세보기
Lee, J.G., Kim, H.S., Seo, K.S., Cho, C.H., Cha, H.Y.. High quality PECVD SiO₂ process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors. Solid-state electronics, vol.122, 32-36.

상세보기
Han, Sang-Woo, Lee, Jae-Gil, Cho, Chun-Hyung, Cha, Ho-Young. Dynamic on-resistance of normally-off recessed AlGaN/GaN-on-Si metal-oxide-semiconductor heterojunction field-effect transistor. Applied physics express, vol.7, no.11, 111002-.

상세보기
Bhat, Thirumaleshwara N., Rajpalke, Mohana K., Roul, Basanta, Kumar, Mahesh, Krupanidhi, S. B.. Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy. Journal of applied physics, vol.110, no.9, 093718-.

상세보기
10.1002/(SICI)1521-396X(199911)176:1<711::AID-PSSA711>3.0.CO;2-Y

상세보기
Joblot, S., Semond, F., Cordier, Y., Lorenzini, P., Massies, J.. High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy. Applied physics letters, vol.87, no.13, 133505-.

상세보기
Schulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A.. Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of crystal growth, vol.289, no.2, 485-488.

상세보기
Cordier, Yvon, Moreno, Jean-Christophe, Baron, Nicolas, Frayssinet, Eric, Chenot, SÉbastien, Damilano, Benjamin, Semond, Fabrice. Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110). IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.29, no.11, 1187-1189.

상세보기
Joblot, S., Cordier, Y., Semond, F., Chenot, S., Vennéguès, P., Tottereau, O., Lorenzini, P., Massies, J.. AlGaN/GaN HEMTs grown on silicon (001) substrates by molecular beam epitaxy. Superlattices and microstructures, vol.40, no.4, 295-299.

상세보기
Dadgar, A, Schulze, F, Wienecke, M, Gadanecz, A, Bläsing, J, Veit, P, Hempel, T, Diez, A, Christen, J, Krost, A. Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction. New journal of physics, vol.9, no.10, 389-389.

상세보기
Ambacher, O., Smart, J., Shealy, J. R., Weimann, N. G., Chu, K., Murphy, M., Schaff, W. J., Eastman, L. F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., Hilsenbeck, J.. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. Journal of applied physics, vol.85, no.6, 3222-3233.

상세보기
Cordier, Y., Moreno, J.C., Baron, N., Frayssinet, E., Chauveau, J.M., Nemoz, M., Chenot, S., Damilano, B., Semond, F.. Growth of GaN based structures on Si(110) by molecular beam epitaxy. Journal of crystal growth, vol.312, no.19, 2683-2688.

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Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE

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Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE

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