참고문헌 (35)

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7. Gwang-Sik Kim, Jeong-Kyu Kim, Seung-Hwan Kim, Jaesung Jo, Changhwan Shin, Jin-Hong Park, Saraswat, Krishna C., Hyun-Yong Yu. Specific Contact Resistivity Reduction Through Ar Plasma-Treated TiO_2−x Interfacial Layer to Metal/Ge Contact. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.35, no.11, 1076-1078.

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9. Agrawal, Ashish, Lin, Joyce, Barth, Michael, White, Ryan, Zheng, Bo, Chopra, Saurabh, Gupta, Shashank, Wang, Ke, Gelatos, Jerry, Mohney, Suzanne E., Datta, Suman. Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts. Applied physics letters, vol.104, no.11, 112101-.

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12. Gwang-Sik Kim, Gwangwe Yoo, Yujin Seo, Seung-Hwan Kim, Karam Cho, Byung Jin Cho, Changhwan Shin, Jin-Hong Park, Hyun-Yong Yu. Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal–Interlayer–n-Germanium Source/Drain Structure. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.37, no.6, 709-712.

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14. Gupta, Shashank, Paramahans Manik, Prashanth, Kesh Mishra, Ravi, Nainani, Aneesh, Abraham, Mathew C., Lodha, Saurabh. Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts. Journal of applied physics, vol.113, no.23, 234505-.

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15. Manik, Prashanth Paramahans, Lodha, Saurabh. Contacts on n-type germanium using variably doped zinc oxide and highly doped indium tin oxide interfacial layers. Applied physics express, vol.8, no.5, 051302-.

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16. Thathachary, Arun V., Bhat, K. N., Bhat, Navakanta, Hegde, M. S.. Fermi level depinning at the germanium Schottky interface through sulfur passivation. Applied physics letters, vol.96, no.15, 152108-.

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17. Wu, Jia-Rong, Wu, Yung-Hsien, Hou, Chin-Yao, Wu, Min-Lin, Lin, Chia-Chun, Chen, Lun-Lun. Impact of fluorine treatment on Fermi level depinning for metal/germanium Schottky junctions. Applied physics letters, vol.99, no.25, 253504-.

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18. Gwang-Sik Kim, Seung-Hwan Kim, Jeong-Kyu Kim, Changhwan Shin, Jin-Hong Park, Saraswat, Krishna C., Byung Jin Cho, Hyun-Yong Yu. Surface Passivation of Germanium Using SF₆ Plasma to Reduce Source/Drain Contact Resistance in Germanium n-FET. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.36, no.8, 745-747.

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19. Matsubara, Hiroshi, Sasada, Takashi, Takenaka, Mitsuru, Takagi, Shinichi. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation. Applied physics letters, vol.93, no.3, 032104-.

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20. Fukuda, Yukio, Ueno, Tomoo, Hirono, Shigeru, Hashimoto, Satoshi. Electrical Characterization of Germanium Oxide/Germanium Interface Prepared by Electron-Cyclotron-Resonance Plasma Irradiation. Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, vol.44, no.b9, 6981-6984.

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21. Rui Zhang, Iwasaki, T., Taoka, N., Takenaka, M., Takagi, S.. High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation. IEEE transactions on electron devices, vol.59, no.2, 335-341.

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22. Delabie, Annelies, Bellenger, Florence, Houssa, Michel, Conard, Thierry, Van Elshocht, Sven, Caymax, Matty, Heyns, Marc, Meuris, Marc. Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide. Applied physics letters, vol.91, no.8, 082904-.

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25. Kita, Koji, Suzuki, Sho, Nomura, Hideyuki, Takahashi, Toshitake, Nishimura, Tomonori, Toriumi, Akira. Direct Evidence of GeO Volatilization from GeO₂/Ge and Impact of Its Suppression on GeO₂/Ge Metal-Insulator-Semiconductor Characteristics. Japanese journal of applied physics, vol.47, no.4, 2349-.

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26. Kuzum, D., Krishnamohan, T., Pethe, A.J., Okyay, A.K., Oshima, Y., Yun Sun, McVittie, J.P., Pianetta, P.A., McIntyre, P.C., Saraswat, K.C.. Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.29, no.4, 328-330.

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27. Yoon, Young Gwang, Kim, Tae Kyun, Hwang, In-Chan, Lee, Hyun-Seung, Hwang, Byeong-Woon, Moon, Jung-Min, Seo, Yu-Jin, Lee, Suk Won, Jo, Moon-Ho, Lee, Seok-Hee. Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment. ACS applied materials & interfaces, vol.6, no.5, 3150-3155.

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28. Wager, John F., Robertson, John. Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer. Journal of applied physics, vol.109, no.9, 094501-.

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30. Robertson, John. Band offsets of wide-band-gap oxides and implications for future electronic devices. Journal of vacuum science & technology. processing, measurement, and phenomena : an official journal of the American Vacuum Society. B, Microelectronics and nanometer structures, vol.18, no.3, 1785-.

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31. Kai Wang, Sheng, Liu, Hong-Gang, Toriumi, Akira. Kinetic study of GeO disproportionation into a GeO₂/Ge system using x-ray photoelectron spectroscopy. Applied physics letters, vol.101, no.6, 061907-.

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32. Kita, Koji, Toriumi, Akira. Origin of electric dipoles formed at high-k/SiO2 interface. Applied physics letters, vol.94, no.13, 132902-.

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35. 10.7567/JJAP.51.04DA03