참고문헌 (40)

1. Usui T. S. S. & Sekiya M. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT’s . IEEE Electron Device Lett . 5 , 276 – 278 ( 1986 ). 

2. Kang M. K. , Kim S. J. & Kim H. J. Fabrication of high performance thin-film transistors via pressure-induced nucleation . Scientic Rep . 4 , 6858 , doi: 10.1038/srep06858 ( 2014 ). 

   상세보기

3. Nomura K. . Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor . Science 300 , 1269 – 1272 ( 2003 ). 12764192 

   상세보기

4. Nomura K. . Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors . Nature 432 , 488 – 492 ( 2004 ). 15565150 

   상세보기

5. Tak Y. J. . Reduction of activation temperature at 150 °C for IGZO films with improved electrical performance via UV-thermal treatment . J. Inf. Disp . 17 , 73 – 78 ( 2016 ). 

6. Kamiya T. . Material characteristics and applications of transparent amorphous oxide semiconductors . NPG Asia Mater . 2 , 15 – 22 ( 2010 ). 

   상세보기

7. Fortunato E. . Oxide semiconductor thin-film transistors: A Review of Recent Advances . Adv. Mater. 24 , 2945 – 2986 ( 2012 ). 22573414 

8. Bhoolokam A. . Analysis of frequency dispersion in amorphous In-Ga-Zn-O thin-film transistor . J. Inf. Disp . 16 , 31 – 36 ( 2015 ). 

9. Kim S. J. . Review of solution-processed oxide thin-film transistors . Jpn. J. Appl. Phys. 53 , 02BA02 , doi: http://dx.doi.org/10.7567/JJAP.53.02BA02 ( 2014 ). 

10. Jeong S. . Impact of metal salt precursor on low-temperature annealed solution-derived Ga-doped In 2 O 3 semiconductor for thin-film transistors . J. Phys. Chem. C 115 , 11773 – 11780 ( 2011 ). 

11. Jeong W. H. . High-performance oxide thin-film transistors using a volatile nitrate precursor for low-temperature solution process . IEEE Electron Device Lett . 33 , 68 – 70 ( 2012 ). 

    상세보기

12. Meyers S. T. . Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs . J. Am. Chem. Soc. 130 , 17603 – 17609 ( 2008 ). 19053193 

    상세보기

13. Theissmann R. . High performance low temperature solution-processed zinc oxide thin film transistor . Thin Solid Films 519 , 5623 – 5628 ( 2011 ). 

    상세보기

14. Hwang Y. H. . An aqueous route for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates . NPG Asia Mater . 5 , E45 , doi: 10.1038/am.2013.11 ( 2013 ). 

    상세보기

15. Park S. Y. . Low-temperature, solution-processed and alkali metal doped ZnO for high-performance thin-film transistors . Adv. Mater. 24 , 834 – 838 ( 2012 ). 22228295 

16. Kim M. G. . Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing . Nature Mater . 10 , 382 – 388 ( 2011 ). 21499311 

    상세보기

17. Cho S. Y. . Novel zinc oxide inks with zinc oxide nanoparticles for low-temperature, solution-processed thin-film transistors . Chem. Mater. 24 , 3517 – 3524 ( 2012 ). 

    상세보기

18. Rim Y. S. . Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors . J. Mater. Chem. 22 , 12491 – 12497 ( 2012 ). 

    상세보기

19. Yoon S. . Study of nitrogen high-pressure annealing on InGaZnO thin-film transistors . ACS Appl. Mater. Interfaces 6 , 13496 – 13501 ( 2014 ). 25078328 

    상세보기

20. Kim S. J. . Low-temperature solution-processed ZrO 2 gate insulators for thin-film transistors using high-pressure annealing . Electrochem. Solid-State Lett . 14 , E35 – E37 ( 2011 ). 

    상세보기

21. Hwang Y. H. . Ultraviolet photo-annealing process for low temperature processed sol-gel zinc tin oxide thin film transistors . Electrochem. Solid-State Lett . 15 , H91 – H93 ( 2012 ). 

    상세보기

22. Seo S. J. . Postannealing process for low temperature processed sol–gel zinc tin oxide thin film transistors . Electrochem. Solid-State Lett . 13 , H357 – H359 ( 2010 ). 

    상세보기

23. Kim Y. H. . Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films . Nature 489 , 128 – 132 ( 2012 ). 22955624 

    상세보기

24. Han S. Y. . Low-temperature, high-performance, solution-processed indium oxide thin-film transistors . J. Am. Chem. Soc. 133 , 5166 – 5169 ( 2011 ). 21417268 

    상세보기

25. Jun T. . High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing . J. Mater. Chem. 21 , 1102 – 1108 ( 2011 ). 

    상세보기

26. Song K. . Low-temperature soluble InZnO thin film transistors by microwave annealing . J. Crys. Growth 326 , 23 – 27 ( 2011 ). 

27. Kim H. S. . Low-temperature solution-processed amorphous indium tin oxide field-effect transistors . J. Am. Chem. Soc. 131 , 10826 – 10827 ( 2009 ). 19603806 

    상세보기

28. Bong H. . High-mobility low-temperature ZnO transistors with low-voltage operation . Appl. Phys. Lett. 96 , 192115 , doi: 10.1063/1.3428357 ( 2010 ). 

    상세보기

29. Park J. H. . Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric . ACS Appl. Mater. Interfaces 5 , 410 – 417 ( 2013 ). 23267443 

    상세보기

30. Kim K. M. . Low-temperature solution processing of AlInZnO/InZnO dual-channel thin-film transistors . IEEE Electron Device Lett . 32 , 1242 – 1244 ( 2011 ). 

    상세보기

31. Kim G. H. . Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors . Appl. Phys. Lett. 94 , 233501 , doi: http://dx.doi.org/10.1063/1.3151827 ( 2009 ). 

32. Hosono H. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application . J. Non-Cryst. Solids 352 , 851 – 858 ( 2006 ). 

    상세보기

33. Kim G. H. . Electrical characteristics of solution-processed InGaZnO thin film transistors depending on Ga concentration . Phys. Status Solidi A 207 , 1677 – 1679 ( 2010 ). 

34. Kamiya T. . Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO 4−x : Optical analyses and first-principle calculations . Phys. Status Solidi C 5 , 3098 – 3100 ( 2008 ). 

35. Noh H. K. . Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors . Phys. Rev. B 84 , 115205 , doi: 10.1103/PhysRevB.84.115205 ( 2011 ). 

    상세보기

36. Xiaoming H. . Enhaced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer . Appl. Phys. Lett. 102 , 193505 , doi: http://dx.doi.org/10.1063/1.4805354 ( 2013 ). 

37. Galindo R. E. . Towards nanometric resolution in multilayer depth profiling: a comparative study of RBS, SIMS, XPS and GDOES . Anal. Bioanal. Chem. 396 , 2725 – 2740 ( 2010 ). 20062981 

    상세보기

38. Sun J. . Improved mobility and conductivity of an Al 2 O 3 incorporated indium zinc oxide system . J. Appl. Phys. 110 , 023709 , doi: http://dx.doi.org/10.1063/1.3605547 ( 2011 ). 

39. Kim G. H. . Electrical characteristics of solution-processed InGaZnO thin film transistors depending on Ga concentration . Phys. Status. Solidi A . 207 , 1677 – 1679 ( 2010 ). 

40. Zan H.–W. . Achieving high field-effect mobility in amorphous indium-gallium-zinc-oxide by capping a strong reduction layer . Adv. Mater. 24 , 3509 – 3514 ( 2012 ). 22678659