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NTIS 바로가기Semiconductor science and technology, v.32 no.3, 2017년, pp.035012 -
Yoon, Seonno (School of Integrated Technology, Yonsei University, Incheon 21983, Korea) , Lee, Seung Min (School of Integrated Technology, Yonsei University, Incheon 21983, Korea) , Kim, Jeyoung (Department of Electronics Engineering, Chungnam National University, Daejeon, Korea) , Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University, Daejeon, Korea) , Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University, Mapo-gu, Seoul 04066, Korea) , Oh, Jungwoo (School of Integrated Technology, Yonsei University, Incheon 21983, Korea)
Titanium disilicide/copper (TiSi2/Cu) gate AlGaN/GaN high electron mobility transistors (HEMTs) with low gate leakage current are demonstrated. The TiSi2/Cu gate devices demonstrate electrical characteristics that are comparable to those of conventional Ni/Au gate devices. At gate voltage of −...
[1] Mishra U K, Shen L, Kazior T E and Wu Y-F 2008 GaN-based RF power devices and amplifiers Proc. IEEE 96 287–305 10.1109/JPROC.2007.911060 GaN-based RF power devices and amplifiers Mishra U K, Shen L, Kazior T E and Wu Y-F Proc. IEEE 0018-9219 96 2008 287 305
[2] Wakejima A et al 2015 Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer Appl. Phys. Express 8 026502 10.7567/APEX.8.026502 Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer Wakejima A et al Appl. Phys. Express 1882-0786 8 2 026502 2015
[3] Lee M-S, Kim D, Eom S, Cha H-Y and Seo K-S 2014 A compact 30 W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 Wmm−1 at 8 GHz IEEE Electron Device Lett. 35 995–7 10.1109/LED.2014.2343233 A compact 30 W AlGaN/GaN HEMTs on silicon substrate with output power density of 8.1 Wmm−1 at 8 GHz Lee M-S, Kim D, Eom S, Cha H-Y and Seo K-S IEEE Electron Device Lett. 0741-3106 35 2014 995 997
[4] Saito W et al 2003 High breakdown voltage AlGaN–GaN power-HEMT design and high current density switching behavior IEEE Trans. Electron Devices 50 2528–31 10.1109/TED.2003.819248 High breakdown voltage AlGaN–GaN power-HEMT design and high current density switching behavior Saito W et al IEEE Trans. Electron Devices 0018-9383 50 2003 2528 2531
[5] Ofuonye B, Lee J, Yan M, Sun C, Zuo J-M and Adesida I 2014 Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures Semicond. Sci. Technol. 29 095005 10.1088/0268-1242/29/9/095005 Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures Ofuonye B, Lee J, Yan M, Sun C, Zuo J-M and Adesida I Semicond. Sci. Technol. 0268-1242 29 9 095005 2014
[6] Jung H et al 2009 Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface Phys. Status Solidi c 6 S976–9 10.1002/pssc.200880819 Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface Jung H et al Phys. Status Solidi 1610-1634 6 c 2009 S976 S979
[7] Miura N et al 2004 Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal Solid-State Electron. 48 689–95 10.1016/j.sse.2003.07.006 Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal Miura N et al Solid-State Electron. 0038-1101 48 2004 689 695
[8] Seo D W et al 2014 600V-18A GaN power MOS-HEMTs on 150 mm Si substrates with Au-free electrodes IEEE Electron Device Lett. 35 446–8 10.1109/LED.2014.2304587 600V-18A GaN power MOS-HEMTs on 150 mm Si substrates with Au-free electrodes Seo D W et al IEEE Electron Device Lett. 0741-3106 35 2014 446 448
[9] Tham W, Bera L, Ang D, Dolmanan S, Bhat T and Tripathy S 2015 AlGa1–xN/GaN MISHEMTs with a common gold-free metal-stack for source/drain/gate IEEE Electron Device Lett. 36 1291–4 10.1109/LED.2015.2491362 AlGa1–xN/GaN MISHEMTs with a common gold-free metal-stack for source/drain/gate Tham W, Bera L, Ang D, Dolmanan S, Bhat T and Tripathy S IEEE Electron Device Lett. 0741-3106 36 2015 1291 1294
[10] Esposto M, Di Lecce V, Bonaiuti M and Chini A 2013 The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs J. Electron. Mater. 42 15–20 10.1007/s11664-012-2268-2 The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs Esposto M, Di Lecce V, Bonaiuti M and Chini A J. Electron. Mater. 42 2013 15 20
[11] Ao J-P, Kikuta D, Kubota N, Naoi Y and Ohno Y 2003 Copper gate AlGaN/GaN HEMT with low gate leakage current IEEE Electron Device Lett. 24 500–2 10.1109/LED.2003.815158 Copper gate AlGaN/GaN HEMT with low gate leakage current Ao J-P, Kikuta D, Kubota N, Naoi Y and Ohno Y IEEE Electron Device Lett. 0741-3106 24 2003 500 502
[12] Sun H, Alt A R and Bolognesi C 2007 Submicrometer copper T-gate AlGaN/GaN HFETs: the gate metal stack effect IEEE Electron Device Lett. 28 350–3 10.1109/LED.2007.895380 Submicrometer copper T-gate AlGaN/GaN HFETs: the gate metal stack effect Sun H, Alt A R and Bolognesi C IEEE Electron Device Lett. 0741-3106 28 2007 350 353
[13] Lin Y-C, Chang C-H, Li F-M, Hsu L-H and Chang E Y 2013 Evaluation of TiN/Cu gate metal scheme for AlGaN/GaN high-electron-mobility transistor application Appl. Phys. Express 6 091003 10.7567/APEX.6.091003 Evaluation of TiN/Cu gate metal scheme for AlGaN/GaN high-electron-mobility transistor application Lin Y-C, Chang C-H, Li F-M, Hsu L-H and Chang E Y Appl. Phys. Express 1882-0786 6 9 091003 2013
[14] Hsieh T-E et al 2015 GaN high-electron-mobility transistor with WN x/Cu gate for high-power applications J. Electron. Mater. 44 4700–5 10.1007/s11664-015-4118-5 GaN high-electron-mobility transistor with WN x/Cu gate for high-power applications Hsieh T-E et al J. Electron. Mater. 44 2015 4700 4705
[15] Yoon S, Song Y, Lee S M, Lee H-D and Oh J 2016 Localized TiSi and TiN phases in Si/Ti/Al/Cu ohmic contacts to AlGaN/GaN heterostructures Semicond. Sci. Technol. 31 055002 10.1088/0268-1242/31/5/055002 Localized TiSi and TiN phases in Si/Ti/Al/Cu ohmic contacts to AlGaN/GaN heterostructures Yoon S, Song Y, Lee S M, Lee H-D and Oh J Semicond. Sci. Technol. 0268-1242 31 5 055002 2016
[16] Raaijmakers I J, van Ommen A H and Reader A H 1989 Crystallization of amorphous Ti–Si alloy thin films: microstructure and resistivity J. Appl. Phys. 65 3896–906 10.1063/1.343353 Crystallization of amorphous Ti–Si alloy thin films: microstructure and resistivity Raaijmakers I J, van Ommen A H and Reader A H J. Appl. Phys. 65 1989 3896 3906
[17] Lasky J B, Nakos J S, Cain O J and Geiss P J 1991 Comparison of transformation to low-resistivity phase and agglomeration of TiSi2 and CoSi2 IEEE Trans. Electron Devices 38 262–9 10.1109/16.69904 Comparison of transformation to low-resistivity phase and agglomeration of TiSi2 and CoSi2 Lasky J B, Nakos J S, Cain O J and Geiss P J IEEE Trans. Electron Devices 0018-9383 38 1991 262 269
[18] Okamoto M et al 2013 An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) (Piscataway, NJ: IEEE) pp 159–61 10.1109/WiPDA.2013.6695586 An ohmic contact process for AlGaN/GaN structures using TiSi2 electrodes Okamoto M et al 2013 IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2013 159 161
[19] Kordoš P, Bernát J, Marso M, Lüth H, Rampazzo F, Tamiazzo G, Pierobon R and Meneghesso G 2005 Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors Appl. Phys. Lett. 86 253511 10.1063/1.1953873 Influence of gate-leakage current on drain current collapse of unpassivated GaN/AlGaN/GaN high electron mobility transistors Kordoš P, Bernát J, Marso M, Lüth H, Rampazzo F, Tamiazzo G, Pierobon R and Meneghesso G Appl. Phys. Lett. 86 253511 2005
[20] Guowang L, Zimmermann T, Cao Y, Lian C, Xing X, Wang R, Fay P, Xing H G and Jena D 2010 Threshold voltage control in HEMTs by work-function engineering IEEE Electron Device Lett. 31 954–6 10.1109/LED.2010.2052912 Threshold voltage control in HEMTs by work-function engineering Guowang L, Zimmermann T, Cao Y, Lian C, Xing X, Wang R, Fay P, Xing H G and Jena D IEEE Electron Device Lett. 0741-3106 31 2010 954 956
[21] Cheung S K and Cheung N W 1986 Extraction of Schottky diode parameters from forward current–voltage characteristics Appl. Phys. Lett. 49 85–7 10.1063/1.97359 Extraction of Schottky diode parameters from forward current–voltage characteristics Cheung S K and Cheung N W Appl. Phys. Lett. 49 1986 85 87
[22] Miura N, Nanjo T, Suita M, Oishi T, Abe Y, Ozeki T, Ishikawa H, Egawa T and Jimbo T 2004 Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal Solid-State Electron. 48 689–95 10.1016/j.sse.2003.07.006 Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal Miura N, Nanjo T, Suita M, Oishi T, Abe Y, Ozeki T, Ishikawa H, Egawa T and Jimbo T Solid-State Electron. 0038-1101 48 2004 689 695
[23] Benedict O, Jaseun L, Minjun Y, Changwoo S, Jian-Min Z and Ilesanmi A 2014 Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures Semicond. Sci. Technol. 29 095005 10.1088/0268-1242/29/9/095005 Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures Benedict O, Jaseun L, Minjun Y, Changwoo S, Jian-Min Z and Ilesanmi A Semicond. Sci. Technol. 0268-1242 29 9 095005 2014
[24] Jessen G H et al 2003 Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts 25th Ann. Tech. Dig. 2003 Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003 (Piscataway, NJ: IEEE) pp 277–9 10.1109/GAAS.2003.1252410 Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts Jessen G H et al 25th Ann. Tech. Dig. 2003 Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003 2003 277 279
[25] Oka T and Nozawa T 2008 AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications IEEE Electron Device Lett. 29 668–70 10.1109/LED.2008.2000607 AlGaN/GaN recessed MIS-gate HFET with high-threshold-voltage normally-off operation for power electronics applications Oka T and Nozawa T IEEE Electron Device Lett. 0741-3106 29 2008 668 670
[26] Cai Y, Zhou Y, Chen K J and Lau K M 2005 High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment IEEE Electron Device Lett. 26 435–7 10.1109/LED.2005.851122 High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment Cai Y, Zhou Y, Chen K J and Lau K M IEEE Electron Device Lett. 0741-3106 26 2005 435 437
[27] Elsayed M, Krause-Rehberg R, Moutanabbir O, Anwand W, Richter S and Hagendorf C 2011 Cu diffusion-induced vacancy-like defects in freestanding GaN New J. Phys. 13 013029 10.1088/1367-2630/13/1/013029 Cu diffusion-induced vacancy-like defects in freestanding GaN Elsayed M, Krause-Rehberg R, Moutanabbir O, Anwand W, Richter S and Hagendorf C New J. Phys. 1367-2630 13 1 013029 2011
[28] Yoon S, Bang J, Song Y and Oh J 2015 Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure Thin Solid Films 590 335–9 10.1016/j.tsf.2015.02.065 Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure Yoon S, Bang J, Song Y and Oh J Thin Solid Films 0040-6090 590 2015 335 339
[29] Istratov A, Flink C, Hieslmair H, McHugo S and Weber E 2000 Diffusion, solubility and gettering of copper in silicon Mater. Sci. Eng. B 72 99–104 10.1016/S0921-5107(99)00514-0 Diffusion, solubility and gettering of copper in silicon Istratov A, Flink C, Hieslmair H, McHugo S and Weber E Mater. Sci. Eng. 0921-5107 72 B 2000 99 104
[30] Garg M, Kumar A, Nagarajan S, Sopanen M and Singh R 2016 Investigation of significantly high barrier height in Cu/GaN Schottky diode AIP Adv. 6 015206 10.1063/1.4939936 Investigation of significantly high barrier height in Cu/GaN Schottky diode Garg M, Kumar A, Nagarajan S, Sopanen M and Singh R AIP Adv. 6 015206 2016
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