참고문헌 (29)

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10. Woojin Choi, Hojin Ryu, Namcheol Jeon, Minseong Lee, Ho-Young Cha, Kwang-Seok Seo. Improvement of $V_{\rm th}$ Instability in Normally-Off GaN MIS-HEMTs Employing ${\rm PEALD}\hbox{-}{\rm SiN}_{\rm x}$ as an Interfacial Layer. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.35, no.1, 30-32.

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12. Bong-Ryeol Park, Jae-Gil Lee, Woojin Choi, Hyungtak Kim, Kwang-Seok Seo, Ho-Young Cha. High-Quality ICPCVD $\hbox{SiO}_{2}$ for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.34, no.3, 354-356.

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14. Woojin Choi, Ogyun Seok, Hojin Ryu, Ho-Young Cha, Kwang-Seok Seo. High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- ${\rm SiN}_{x}$ /RF-Sputtered- ${\rm HfO}_{2}$. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.35, no.2, 175-177.

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15. Kang, Myoung-Jin, Lee, Min-Seong, Choi, Gwang-Ho, Hwang, Il-Hwan, Cha, Ho-Young, Seo, Kwang-Seok. High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN_x MIS structure : High-performance normally off AlGaN/GaN-on-Si HEMTs. Physica status solidi. PSS. A, Applications and materials science, vol.214, no.8, 1600726-.

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17. Roh, Seung-Hyun, Eom, Su-Keun, Choi, Gwang-Ho, Kang, Myoung-Jin, Kim, Dong-Hwan, Hwang, Il-Hwan, Seo, Kwang-Seok, Lee, Jae-Gil, Byun, Young-Chul, Cha, Ho-Young. Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator. Journal of the Korean Physical Society, vol.71, no.4, 185-190.

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18. Ronghua Wang, Saunier, P, Xiu Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Snider, G, Fay, P, Jena, D, Huili Xing. Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.12, 1383-1385.

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19. Ning Lu, Hook, Terence B., Johnson, Jeffrey B., Wermer, Carl, Putnam, Christopher, Wachnik, Richard A.. Efficient and Accurate Schematic Transistor Model of FinFET Parasitic Elements. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.34, no.9, 1100-1102.

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21. Ťapajna, M., Jurkovič, M., Válik, L., Haščík, Š., Gregušová, D., Brunner, F., Cho, E.-M., Kuzmík, J.. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors. Applied physics letters, vol.102, no.24, 243509-.

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22. Tian-Li Wu, Franco, Jacopo, Marcon, Denis, De Jaeger, Brice, Bakeroot, Benoit, Stoffels, Steve, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs. IEEE transactions on electron devices, vol.63, no.5, 1853-1860.

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23. Chen, Wanjun, Wong, King-Yuen, Huang, Wei, Chen, Kevin J.. High-performance AlGaN∕GaN lateral field-effect rectifiers compatible with high electron mobility transistors. Applied physics letters, vol.92, no.25, 253501-.

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24. Bin Lu, Saadat, O I, Palacios, T. High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.31, no.9, 990-992.

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25. N.Ikeda R.Tamura T.Kokawa H.Kambayashi Y.Sato T.Nomura S.Kato IEEE ISPSD 23rd International Symposium 2011. 

26. Lu, Bin, Matioli, Elison, Palacios, Tomás. Tri-Gate Normally-Off GaN Power MISFET. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.33, no.3, 360-362.

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27. J.Wei S.Liu B.Li X.Tang Y.Lu C.Liu M.Hua Z.Zhang G.Tang K. J.Chen IEEE IEDM 2015. 

28. Shuxun Lin, Maojun Wang, Fei Sang, Ming Tao, Wen, Cheng P., Bing Xie, Min Yu, Jinyan Wang, Yilong Hao, Wengang Wu, Jun Xu, Kai Cheng, Bo Shen. A GaN HEMT Structure Allowing Self-Terminated, Plasma-Free Etching for High-Uniformity, High-Mobility Enhancement-Mode Devices. IEEE electron device letters : a publication of the IEEE Electron Devices Society, vol.37, no.4, 377-380.

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29. Lee, J.G., Kim, H.S., Seo, K.S., Cho, C.H., Cha, H.Y.. High quality PECVD SiO₂ process for recessed MOS-gate of AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistors. Solid-state electronics, vol.122, 32-36.

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