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NTIS 바로가기Journal of vacuum science and technology. materials, processing, measurement, & phenomena : JVST B. B, Nanotechnology & microelectronics, v.34 no.4, 2016년, pp.040602 -
Kim, Dong-Hwan (Seoul National University Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center, , Seoul 151-744, South Korea) , Eom, Su-Keun (Seoul National University Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center, , Seoul 151-744, South Korea) , Kang, Myoung-Jin (Seoul National University Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center, , Seoul 151-744, South Korea) , Jeong, Jun-Seok (Seoul National University Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center, , Seoul 151-744, South Korea) , Seo, Kwang-Seok (Seoul National University Department of Electrical and Computer Engineering, Interuniversity Semiconductor Research Center, , Seoul 151-744, South Korea) , Cha, Ho-Young (Hongik University School of Electronic and Electrical Engineering, , Seoul 121-791, South Korea)
This letter reports an AlGaN/GaN-on-Si power amplifier (PA) monolithic microwave integrated circuit (MMIC) operating at V-band using advanced gate processing technology. The AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) employed a gate length of 100 nm with a double-deck shaped (DDS) fi...
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