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IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.38 no.7, 2017년, pp.879 - 882
Hu, Shiben (Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China) , Lu, Kuankuan (Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China) , Ning, Honglong (Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China) , Zheng, Zeke (Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China) , Zhang, Hongke (Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China) , Fang, Zhiqiang (Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South C) , Yao, Rihui , Xu, Miao , Wang, Lei , Lan, Linfeng , Peng, Junbiao , Lu, Xubing
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This letter demonstrates a high-mobility amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) with aluminum oxide (Al2O3) passivation layer by radio frequency (RF) magnetron sputtering and copper (Cu) source/drain electrodes. The fabricated a-IGZO TFT exhibited 20 ti...
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Hu, Shiben, Fang, Zhiqiang, Ning, Honglong, Tao, Ruiqiang, Liu, Xianzhe, Zeng, Yong, Yao, Rihui, Huang, Fuxiang, Li, Zhengcao, Xu, Miao, Wang, Lei, Lan, Linfeng, Peng, Junbiao. Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs. Materials, vol.9, no.8, 623-.
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