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Materials science in semiconductor processing, v.71, 2017년, pp.240 - 251
Ajay , Narang, R. , Saxena, M. , Gupta, M.
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In this work, the sensitivity of two types gate underlap Junctionless Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (JL DG MOSFET) has been compared when the analytes bind in the underlap region. Gate underlap region considered at source end and drain end once at a time in the channe...
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