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NTIS 바로가기Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, v.31 no.19/21, 2017년, pp.1740004 -
Jiang, Yibo (Changzhou Institute of Technology, Changzhou, China) , Bi, Hui (Southeast University, Nanjing, China) , Dong, Liangwei (Changzhou Institute of Technology, Changzhou, China) , Li, Qinglong (Changzhou Institute of Technology, Changzhou, China)
Implementation of Electrostatic Discharge (ESD) protection in Silicon on Insulator (SOI) technology is a challenge because of the inherent properties of poor heat conductor and heat trapping. In this paper, a novel device as ESD clamp is proposed as Fix-Base SOI FinFET clamp which addresses the trou...
Hisamoto, D., Lee, Wen-Chin, Kedzierski, J., Takeuchi, H., Asano, K., Kuo, C., Anderson, E., King, Tsu-Jae, Bokor, J., Hu, Chenming. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm. IEEE transactions on electron devices, vol.47, no.12, 2320-2325.
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