참고문헌 (39)

1. 1. Nomura K Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nature 2004 432 488 491 10.1038/nature03090 15565150 

   상세보기

2. 2. Ahn BD A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition Jpn. J. Appl. Phys. 2009 48 03B019 10.1143/JJAP.48.03B019 

   상세보기

3. 3. Fortunate E Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature Appl. Phys. Lett. 2004 85 2541 10.1063/1.1790587 

   상세보기

4. 4. Jaakko L Far-UV Annealed Inkjet-Printed In 2 O 3 Semiconductor Layers for Thi n Film Transistors on a Flexible Polyethylene Naphthalate Substrate ACS Appl. Mater. Interfaces 2017 9 10 8774 8782 10.1021/acsami.6b14654 28211995 

   상세보기

5. 5. Alexey AT Semiconducting metal oxide sensor array for the selective detection of combustion gases Sensors and Actuators B 2003 83 126 134 

6. 6. Suresh A Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors Appl. Phys. Lett. 2008 92 033502 10.1063/1.2824758 

   상세보기

7. 7. Cross RBM Investigating the stability of zinc oxide thin film transistors Appl. Phys. Lett 2006 89 263513 10.1063/1.2425020 

   상세보기

8. 8. Park JS Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water Appl. Phys. Lett. 2008 92 072104 10.1063/1.2838380 

   상세보기

9. 9. Janotti A Oxygen vacancies in ZnO Appl. Phys. Lett. 2005 87 122102 10.1063/1.2053360 

   상세보기

10. 10. Jeong JK Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors Appl. Phys. Lett. 2008 93 123508 10.1063/1.2990657 

    상세보기

11. 11. Ji KH Comparative study on light-induced bias stress instability of IGZO transistors with SiNx and SiO 2 gate dielectrics IEEE Electron Devices Lett. 2010 31 1404 1406 10.1109/LED.2010.2073439 

    상세보기

12. 12. Tak YJ Reduction of activation temperature at 150 °C for IGZO films with improved electrical performance via UV-thermal treatment J. Inf. Disp. 2016 17 73 78 10.1080/15980316.2016.1172524 

    상세보기

13. 13. Kim W-G High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C Sci. Rep. 2016 6 23039 10.1038/srep23039 26972476 

    상세보기

14. 14. Dai M-K Multifunctionality of Giant and long-lasting Persistent Photoconductivity: Semiconductor-Conductor Transition in Graphene Nanosheets and Amorphous InGaZnO Hybrids ACS Photonics. 2015 2 1057 1064 10.1021/acsphotonics.5b00084 

    상세보기

15. 15. Jones, C. W. et al . Applications of Hydrogen Peroxide and Derivatives. Royal Society of Chemistry (1999). 

16. 16. Mardhiah MS Hydroxyl Radical-Assisted Decomposition and Oxidation in Solution-Processed Indium Oxide Thin-Film Transistors J. Mater. Chem. C. 2015 3 7499 7505 10.1039/C5TC01457C 

    상세보기

17. 17. Afzal A Anatoxin-a degradation by advanced oxidation processes: Vacuum-UV at 172nm, photolysis using medium pressure UV and UV/H 2 O 2 Water Res. 2010 44 278 286 10.1016/j.watres.2009.09.021 19818467 

    상세보기

18. 18. Andre T Mechanism of Hydrogen peroxide Pyrolysis Can. J. Chem. 1974 52 794 10.1139/v74-125 

    상세보기

19. 19. Lousada CM Mechanism of H 2 O 2 Decomposition on Transition Metal oxide Surfaces J. Phys. Chem. C 2012 116 9533 9543 10.1021/jp300255h 

    상세보기

20. 20. Hiroki A Decomposition of Hydrogen Peroxide at Water-Ceramic Oxide Interfaces J. Phys. Chem. B 2005 109 3364 3370 10.1021/jp046405d 16851366 

    상세보기

21. 21. Sun R–D Photoinduced Surface Wettability Conversion of ZnO and TiO 2 Thin Films J. Phys. Chem. B 2001 105 1984 1990 10.1021/jp002525j 

    상세보기

22. 22. Lee S Oxygen Defect-Induced Metastability in Oxide Semiconductors Probed by Gate Pulse Spectroscopy Sci. Rep. 2015 5 14902 10.1038/srep14902 26446400 

    상세보기

23. 23. Dai M-K Multifunctionality of Giant and long-lasting Persistent Photoconductivity: Semiconductor-Conductor Transition in Graphene Nanosheets and Amorphous InGaZnO Hybrids ACS Photonics 2015 2 1057 1064 10.1021/acsphotonics.5b00084 

    상세보기

24. 24. Robertson J Light induced instability mechanism in amorphous InGaZn oxide semiconductors Appl. Phys. Lett. 2014 104 162102 10.1063/1.4872227 

    상세보기

25. 25. Rim YS Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing Appl. Phys. Lett. 2013 102 143503 10.1063/1.4801436 

    상세보기

26. 26. Xu L Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-Based Thin Film Transistors: From Simulation to Experiment ACS Appl. Mater. Interfaces 2016 5408 5415 

27. 27. Chen W–T Oxygen-Dependent Instability and Annealing/Passivation Effects in Amorphous In-Ga-Zn-O Thin-Film Transistors IEEE Electron Devices Lett. 2011 32 1552 1554 10.1109/LED.2011.2165694 

    상세보기

28. 28. Kim M–G High-Performance Solution-Processed Amorphous Zinc-Indium-Tin Oxide Thin-Film Transistors J. Am. Chem. Soc. 2010 132 10352 10364 10.1021/ja100615r 20662515 

    상세보기

29. 29. Park JH Simple Method to Enhance Positive Bias Stress Stability of In−Ga−Zn−O Thin-Film Transistors Using a Vertically Graded Oxygen-Vacancy Active Layer ACS Appl. Mater. Interfaces 2014 21363 21368 

30. 30. Kim M–H Photochemical Hydrogen Doping Induced Embedded Two-Dimensional Metallic Channel Formation in InGaZnO at Room Temperature ACS Nano 2014 6 21363 21368 

31. 31. Tak YJ Enhanced Electrical Characteristics and Stability via Simultaneous Ultraviolet and Thermal Treatment of Passivated Amorphous In−Ga−Zn−O Thin-Film Transistors ACS Appl. Mater. Interfaces 2014 6399 6405 

32. 32. Tak YJ Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments Sci. Rep. 2016 6 21869 10.1038/srep21869 26902863 

    상세보기

33. 33. John RA Low-Temperature Chemical Transformations for High-Performance Solution-Processed Oxide Transistors Chem. Mater. 2016 28 8305 8313 10.1021/acs.chemmater.6b03499 

    상세보기

34. 34. Kamiya T Doping and Defect Formation Energies in Amorphous Oxide Semiconductor a-InGaZnO 4 Studied by Density Functional Theory Phys. Status Solidi A. 2010 207 1698 1703 10.1002/pssa.200983772 

    상세보기

35. 35. Aikawa S Effects of Dopants in InOx-Based Amorphous Oxide Semiconductors for Thin-Film Transistor Applications Appl. Phys. Lett. 2013 103 172105 10.1063/1.4822175 

    상세보기

36. 36. Giamello E Evidence of Stable Hydroxyl Radicals and Other Oxygen Radical Species Generated by Interaction of Hydrogen Peroxide with Magnesium Oxide J. Phys. Chem. 1993 97 5735 5740 10.1021/j100123a045 

    상세보기

37. 37. Lousada CM Kinetics, Mechanism, and Activation Energy of H 2 O 2 Decomposition on the Surface of ZrO 2 J. Phys. Chem. C. 2010 114 11202 11208 10.1021/jp1028933 

    상세보기

38. 38. Suh M Reactions of Hydroxyl Radicals on Titania, Silica, Alumina, and Gold Surfaces J. Phys. Chem. B. 2000 104 2736 2742 10.1021/jp993653e 

    상세보기

39. 39. Su W–Y Improving the property of ZnO nanorods using hydrogen peroxide solution J. Cryst. Growth 2008 310 2806 2809 10.1016/j.jcrysgro.2008.01.040 

    상세보기