[논문]Low-temperature fabrication of an HfO 2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process

Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong-gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae

doi:10.1038/s41598-017-16585-x

Low-temperature fabrication of an HfO 2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process 원문보기

Scientific reports, v.7, 2017년, pp.16265 -

Hong, Seonghwan (School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722 Republic of Korea) , Park, Sung Pyo (School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722 Republic of Korea) , Kim, Yeong-gyu (School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722 Republic of Korea) , Kang, Byung Ha (School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722 Republic of Korea) , Na, Jae Won (School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722 Republic of Korea) , Kim, Hyun Jae (School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722 Republic of Korea)

Abstract ▼ AI-Helper

We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

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Low-temperature fabrication of an HfO 2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process 원문보기

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Low-temperature fabrication of an HfO 2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process 원문보기

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