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Hydrometallurgy, v.174, 2017년, pp.105 - 115
Lu, Fanghai (School of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang 550003, China) , Xiao, Tangfu (State Key Laboratory of Environmental Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550081, China) , Lin, Jian (State Key Laboratory of Environmental Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550081, China) , Ning, Zengping (State Key Laboratory of Environmental Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550081, China) , Long, Qiong (School of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang 550003, China) , Xiao, Lihua (School of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang 550003, China) , Huang, Fang (School of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang 550003, China) , Wang, Wankun (School of Materials and Metallurgical Engineering, Guizhou Institute of Technology, Guiyang 550003, China) , Xiao, Qingxiang (State Key Laboratory of Environmental Geochemistry, Institute of) , Lan, Xiaolong , Chen, Haiyan
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Abstract Gallium (Ga) is extensively employed in integrated circuits and advanced electronic devices as it provides the benefits of low energy consumption and high computation speeds. However, the Ga-bearing host minerals are scarce in nature. Ga occurs in combination with several minerals, mainly ...
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